JPS509898A - - Google Patents
Info
- Publication number
- JPS509898A JPS509898A JP6193673A JP6193673A JPS509898A JP S509898 A JPS509898 A JP S509898A JP 6193673 A JP6193673 A JP 6193673A JP 6193673 A JP6193673 A JP 6193673A JP S509898 A JPS509898 A JP S509898A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6193673A JPS509898A (ja) | 1973-06-04 | 1973-06-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6193673A JPS509898A (ja) | 1973-06-04 | 1973-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS509898A true JPS509898A (ja) | 1975-01-31 |
Family
ID=13185551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6193673A Pending JPS509898A (ja) | 1973-06-04 | 1973-06-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS509898A (ja) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54107674A (en) * | 1978-02-10 | 1979-08-23 | Toshiba Corp | Dry etching unit |
| JPS5633816A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Method and device for ion implantation |
| JPS56156662A (en) * | 1980-05-02 | 1981-12-03 | Hitachi Ltd | Device for ion implantation |
| JPS60105154A (ja) * | 1983-08-15 | 1985-06-10 | アプライド マテリアルズ インコ−ポレ−テツド | イオン注入装置 |
| JPH09134703A (ja) * | 1996-08-08 | 1997-05-20 | Hitachi Ltd | 高電圧イオン打込み装置 |
| JP2014110236A (ja) * | 2012-12-04 | 2014-06-12 | Sen Corp | イオン注入装置 |
-
1973
- 1973-06-04 JP JP6193673A patent/JPS509898A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54107674A (en) * | 1978-02-10 | 1979-08-23 | Toshiba Corp | Dry etching unit |
| JPS6339095B2 (ja) * | 1978-02-10 | 1988-08-03 | Tokyo Shibaura Electric Co | |
| JPS5633816A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Method and device for ion implantation |
| JPH0125187B2 (ja) * | 1979-08-29 | 1989-05-16 | Hitachi Ltd | |
| JPS56156662A (en) * | 1980-05-02 | 1981-12-03 | Hitachi Ltd | Device for ion implantation |
| JPS6257065B2 (ja) * | 1980-05-02 | 1987-11-28 | Hitachi Ltd | |
| JPS60105154A (ja) * | 1983-08-15 | 1985-06-10 | アプライド マテリアルズ インコ−ポレ−テツド | イオン注入装置 |
| JPH09134703A (ja) * | 1996-08-08 | 1997-05-20 | Hitachi Ltd | 高電圧イオン打込み装置 |
| JP2014110236A (ja) * | 2012-12-04 | 2014-06-12 | Sen Corp | イオン注入装置 |
| US9466467B2 (en) | 2012-12-04 | 2016-10-11 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus |