JPS5085284A - - Google Patents

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Publication number
JPS5085284A
JPS5085284A JP13299673A JP13299673A JPS5085284A JP S5085284 A JPS5085284 A JP S5085284A JP 13299673 A JP13299673 A JP 13299673A JP 13299673 A JP13299673 A JP 13299673A JP S5085284 A JPS5085284 A JP S5085284A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13299673A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13299673A priority Critical patent/JPS5085284A/ja
Publication of JPS5085284A publication Critical patent/JPS5085284A/ja
Pending legal-status Critical Current

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  • Bipolar Integrated Circuits (AREA)
JP13299673A 1973-11-29 1973-11-29 Pending JPS5085284A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13299673A JPS5085284A (ja) 1973-11-29 1973-11-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13299673A JPS5085284A (ja) 1973-11-29 1973-11-29

Publications (1)

Publication Number Publication Date
JPS5085284A true JPS5085284A (ja) 1975-07-09

Family

ID=15094336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13299673A Pending JPS5085284A (ja) 1973-11-29 1973-11-29

Country Status (1)

Country Link
JP (1) JPS5085284A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112182A (en) * 1978-02-22 1979-09-01 Nec Corp Semiconductor device
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode
JPS5994879A (ja) * 1982-11-24 1984-05-31 New Japan Radio Co Ltd 半導体装置
JPS60103679A (ja) * 1983-10-31 1985-06-07 バア−−ブラウン コ−ポレ−シヨン 改良された集積回路の基準ダイオ−ド及びこれのための製造方法
JPS60249375A (ja) * 1984-05-09 1985-12-10 アナログ デバイセス インコーポレーテツド 埋込みツエナー・ダイオードをもつicウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるic構造体
JPS61120478A (ja) * 1984-11-16 1986-06-07 Fuji Electric Co Ltd 半導体集積回路
JPS62180965U (ja) * 1987-04-09 1987-11-17
JPS63184359A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の入力保護回路

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112182A (en) * 1978-02-22 1979-09-01 Nec Corp Semiconductor device
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode
JPS5994879A (ja) * 1982-11-24 1984-05-31 New Japan Radio Co Ltd 半導体装置
JPS60103679A (ja) * 1983-10-31 1985-06-07 バア−−ブラウン コ−ポレ−シヨン 改良された集積回路の基準ダイオ−ド及びこれのための製造方法
JPS60249375A (ja) * 1984-05-09 1985-12-10 アナログ デバイセス インコーポレーテツド 埋込みツエナー・ダイオードをもつicウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるic構造体
JPS61120478A (ja) * 1984-11-16 1986-06-07 Fuji Electric Co Ltd 半導体集積回路
JPH0568864B2 (ja) * 1984-11-16 1993-09-29 Fuji Electric Co Ltd
JPS63184359A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の入力保護回路
JPH0413865B2 (ja) * 1987-01-27 1992-03-11 Tokyo Shibaura Electric Co
JPS62180965U (ja) * 1987-04-09 1987-11-17

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