JPS507557B1 - - Google Patents
Info
- Publication number
- JPS507557B1 JPS507557B1 JP7422870A JP7422870A JPS507557B1 JP S507557 B1 JPS507557 B1 JP S507557B1 JP 7422870 A JP7422870 A JP 7422870A JP 7422870 A JP7422870 A JP 7422870A JP S507557 B1 JPS507557 B1 JP S507557B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7422870A JPS507557B1 (enrdf_load_stackoverflow) | 1970-08-26 | 1970-08-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7422870A JPS507557B1 (enrdf_load_stackoverflow) | 1970-08-26 | 1970-08-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS507557B1 true JPS507557B1 (enrdf_load_stackoverflow) | 1975-03-26 |
Family
ID=13541095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7422870A Pending JPS507557B1 (enrdf_load_stackoverflow) | 1970-08-26 | 1970-08-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS507557B1 (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5218244A (en) * | 1975-08-02 | 1977-02-10 | Youei Seisakusho:Kk | Construction process for a heat exchanger |
| JPS54126242U (enrdf_load_stackoverflow) * | 1978-02-23 | 1979-09-03 | ||
| RU2473719C1 (ru) * | 2011-06-16 | 2013-01-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" | Способ получения кристаллов кремния |
| FR3028266A1 (fr) * | 2014-11-10 | 2016-05-13 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium monocristallin de type n a concentration en donneurs thermiques a base d'oxygene controlee |
-
1970
- 1970-08-26 JP JP7422870A patent/JPS507557B1/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5218244A (en) * | 1975-08-02 | 1977-02-10 | Youei Seisakusho:Kk | Construction process for a heat exchanger |
| JPS54126242U (enrdf_load_stackoverflow) * | 1978-02-23 | 1979-09-03 | ||
| RU2473719C1 (ru) * | 2011-06-16 | 2013-01-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" | Способ получения кристаллов кремния |
| FR3028266A1 (fr) * | 2014-11-10 | 2016-05-13 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium monocristallin de type n a concentration en donneurs thermiques a base d'oxygene controlee |
| WO2016075092A1 (fr) * | 2014-11-10 | 2016-05-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un lingot de silicium monocristallin de type n |
| EP3218533A1 (fr) * | 2014-11-10 | 2017-09-20 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Procede de fabrication d'un lingot de silicium monocristallin de type n |