JPS5068782A - - Google Patents

Info

Publication number
JPS5068782A
JPS5068782A JP49009016A JP901674A JPS5068782A JP S5068782 A JPS5068782 A JP S5068782A JP 49009016 A JP49009016 A JP 49009016A JP 901674 A JP901674 A JP 901674A JP S5068782 A JPS5068782 A JP S5068782A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49009016A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5068782A publication Critical patent/JPS5068782A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/16—Apparatus for producing preselected time intervals for use as timing standards using pulses produced by radio-isotopes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Non-Volatile Memory (AREA)
  • Light Receiving Elements (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Electric Clocks (AREA)
  • Thin Film Transistor (AREA)
JP49009016A 1973-01-22 1974-01-22 Pending JPS5068782A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB317373*[A GB1443434A (en) 1973-01-22 1973-01-22 Semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5068782A true JPS5068782A (ja) 1975-06-09

Family

ID=9753317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49009016A Pending JPS5068782A (ja) 1973-01-22 1974-01-22

Country Status (7)

Country Link
US (1) US4275405A (ja)
JP (1) JPS5068782A (ja)
CA (1) CA1046655A (ja)
DE (1) DE2401560A1 (ja)
FR (1) FR2214972B1 (ja)
GB (1) GB1443434A (ja)
NL (1) NL7400687A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149584A (ja) * 1986-11-24 1988-06-22 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 放射線測定方法およびその装置
JP2016526790A (ja) * 2013-06-20 2016-09-05 ストレイティオ， インコーポレイテッドＳｔｒａｔｉｏ， Ｉｎｃ． Ｃｍｏｓ画像センサ用のゲート制御型電荷変調デバイス

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158286A (en) * 1976-07-06 1979-06-19 Texas Instruments Incorporated Horologic instruments with random timing source
US4676661A (en) * 1976-07-06 1987-06-30 Texas Instruments Incorporated Radioactive timing source for horologic instruments and the like
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
DE3511363A1 (de) * 1985-03-28 1986-10-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bereichen mit einstellbarer, gleichfoermiger dotierung in siliziumkristallscheiben durch neutronenbestrahlung sowie verwendung dieses verfahrens zur herstellung von leistungsthyristoren
US4764715A (en) * 1987-06-15 1988-08-16 Motorola, Inc. Electronic service timer for an appliance
US6567346B2 (en) * 2000-01-07 2003-05-20 Texas Instruments Incorporated Absolute time scale clock
US7075284B2 (en) * 2002-07-08 2006-07-11 Kabushiki Kaisha Toshiba Time limit function utilization
JP3929887B2 (ja) * 2002-12-25 2007-06-13 株式会社東芝 半導体集積回路、半導体集積回路モジュール、および、情報機器
JP3929888B2 (ja) * 2002-12-25 2007-06-13 株式会社東芝 Ｉｃカード
JP3822170B2 (ja) * 2003-01-31 2006-09-13 株式会社東芝 Ｉｃカードの利用期間設定方法、ｉｃカード、および、ｉｃカードケース
GB2405225B (en) * 2003-08-20 2006-05-17 Alan Charles Sturt Radioactive timekeeping
JP4239944B2 (ja) * 2004-09-28 2009-03-18 セイコーエプソン株式会社 プロジェクタ、及びプロジェクタ等に用いられる偏光部材
KR20070108179A (ko) 2005-01-18 2007-11-08 엔엑스피 비 브이 변형 억제 센서 참조, 집적 회로 및 시간 측정 회로
US8487507B1 (en) * 2008-12-14 2013-07-16 Peter Cabauy Tritium direct conversion semiconductor device
US9466401B1 (en) * 2009-12-14 2016-10-11 City Labs, Inc. Tritium direct conversion semiconductor device
US7935935B2 (en) * 2009-02-27 2011-05-03 Medtronic, Inc. Radiation-based timer for implantable medical devices
US20100289121A1 (en) * 2009-05-14 2010-11-18 Eric Hansen Chip-Level Access Control via Radioisotope Doping
US9305674B1 (en) * 2012-03-22 2016-04-05 U.S. Department Of Energy Method and device for secure, high-density tritium bonded with carbon
US9064610B2 (en) * 2012-04-05 2015-06-23 Raytheon Co. Betavoltaic battery with diamond moderator and related system and method
WO2014080272A1 (en) 2012-11-23 2014-05-30 UNIVERSITá DEGLI STUDI DI UDINE Apparatus and method to generate random numbers from radioactive decay
ITUD20120197A1 (it) * 2012-11-23 2014-05-24 Univ Degli Studi Udine Apparecchiatura e metodo per la generazione di numeri casuali da decadimento radioattivo
US10186339B2 (en) 2014-02-17 2019-01-22 City Labs, Inc. Semiconductor device for directly converting radioisotope emissions into electrical power
US11200997B2 (en) 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
US9799419B2 (en) 2014-02-17 2017-10-24 City Labs, Inc. Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
KR102456957B1 (ko) * 2019-05-17 2022-10-21 한국전자통신연구원 전계효과 트랜지스터

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370414A (en) * 1965-06-22 1968-02-27 Benrus Watch Company Inc Electronic timepiece
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3582656A (en) * 1968-03-21 1971-06-01 Bulova Watch Co Inc Time base combining radioactive source and solid-state detector
CH521625A (de) * 1968-04-17 1971-11-30 Baumgartner Freres Sa Mittels Kernenergie betriebener Zeitmesser
US3629582A (en) * 1969-04-24 1971-12-21 Dale R Koehler Timepiece with radioactive timekeeping standard
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149584A (ja) * 1986-11-24 1988-06-22 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 放射線測定方法およびその装置
JP2016526790A (ja) * 2013-06-20 2016-09-05 ストレイティオ， インコーポレイテッドＳｔｒａｔｉｏ， Ｉｎｃ． Ｃｍｏｓ画像センサ用のゲート制御型電荷変調デバイス

Also Published As

Publication number Publication date
FR2214972A1 (ja) 1974-08-19
DE2401560A1 (de) 1974-08-01
GB1443434A (en) 1976-07-21
NL7400687A (ja) 1974-07-24
FR2214972B1 (ja) 1978-11-10
US4275405A (en) 1981-06-23
CA1046655A (en) 1979-01-16

Similar Documents

Publication Publication Date Title
AR201758A1 (ja)
AU465372B2 (ja)
AR201235Q (ja)
AR201231Q (ja)
AU474511B2 (ja)
FR2214972B1 (ja)
AU465453B2 (ja)
AU465434B2 (ja)
AU450229B2 (ja)
BR7403057A (ja)
AR201229Q (ja)
AU466283B2 (ja)
AR199451A1 (ja)
AU472848B2 (ja)
AR195311A1 (ja)
AU461342B2 (ja)
AR200256A1 (ja)
AR201432A1 (ja)
AR196382A1 (ja)
AR195948A1 (ja)
AR200885A1 (ja)
AR193950A1 (ja)
AR210729A1 (ja)
AU1891376A (ja)
AR196212Q (ja)