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Publication of JPS5061188ApublicationCriticalpatent/JPS5061188A/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D18/00—Thyristors
H10D18/40—Thyristors with turn-on by field effect
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
H10D84/131—Thyristors having built-in components
H10D84/138—Thyristors having built-in components the built-in components being FETs