JPS5060188A - - Google Patents

Info

Publication number
JPS5060188A
JPS5060188A JP10810773A JP10810773A JPS5060188A JP S5060188 A JPS5060188 A JP S5060188A JP 10810773 A JP10810773 A JP 10810773A JP 10810773 A JP10810773 A JP 10810773A JP S5060188 A JPS5060188 A JP S5060188A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10810773A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10810773A priority Critical patent/JPS5060188A/ja
Priority to SE7412062A priority patent/SE405184B/xx
Priority to FR7432334A priority patent/FR2245089B1/fr
Priority to CA210,002A priority patent/CA1005926A/en
Priority to DE19742446104 priority patent/DE2446104C3/de
Priority to GB4185574A priority patent/GB1454323A/en
Publication of JPS5060188A publication Critical patent/JPS5060188A/ja
Priority to US05/713,872 priority patent/US4009482A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Control Of Temperature (AREA)
JP10810773A 1973-09-26 1973-09-26 Pending JPS5060188A (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP10810773A JPS5060188A (de) 1973-09-26 1973-09-26
SE7412062A SE405184B (sv) 1973-09-26 1974-09-25 Temperaturstyrd halvledarstromstellare i vilken ingar ett temperaturkensligt tyristorelement
FR7432334A FR2245089B1 (de) 1973-09-26 1974-09-25
CA210,002A CA1005926A (en) 1973-09-26 1974-09-25 Semiconductor thermally sensitive switch structure
DE19742446104 DE2446104C3 (de) 1973-09-26 1974-09-26 Wärmeempfindliche Halbleiterschaltvorrichtung
GB4185574A GB1454323A (en) 1973-09-26 1974-09-26 Semiconductor tehrmally sensitive switch structure
US05/713,872 US4009482A (en) 1973-09-26 1976-08-12 Semiconductor thermally sensitive switch structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10810773A JPS5060188A (de) 1973-09-26 1973-09-26

Publications (1)

Publication Number Publication Date
JPS5060188A true JPS5060188A (de) 1975-05-23

Family

ID=14476050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10810773A Pending JPS5060188A (de) 1973-09-26 1973-09-26

Country Status (5)

Country Link
JP (1) JPS5060188A (de)
CA (1) CA1005926A (de)
FR (1) FR2245089B1 (de)
GB (1) GB1454323A (de)
SE (1) SE405184B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266382A (en) * 1975-11-28 1977-06-01 Mitsubishi Electric Corp Indirectly-heated heat-sensitive thyristor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
DE3671581D1 (de) * 1985-07-09 1990-06-28 Siemens Ag Mosfet mit temperaturschutz.
US5140394A (en) * 1988-07-26 1992-08-18 Texas Instruments Incorporated Electrothermal sensor apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266382A (en) * 1975-11-28 1977-06-01 Mitsubishi Electric Corp Indirectly-heated heat-sensitive thyristor

Also Published As

Publication number Publication date
SE405184B (sv) 1978-11-20
FR2245089A1 (de) 1975-04-18
FR2245089B1 (de) 1978-11-24
SE7412062L (de) 1975-03-27
DE2446104B2 (de) 1976-03-18
DE2446104A1 (de) 1975-04-03
GB1454323A (en) 1976-11-03
CA1005926A (en) 1977-02-22

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