JPS5054290A - - Google Patents
Info
- Publication number
- JPS5054290A JPS5054290A JP48102388A JP10238873A JPS5054290A JP S5054290 A JPS5054290 A JP S5054290A JP 48102388 A JP48102388 A JP 48102388A JP 10238873 A JP10238873 A JP 10238873A JP S5054290 A JPS5054290 A JP S5054290A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48102388A JPS5054290A (fr) | 1973-09-11 | 1973-09-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48102388A JPS5054290A (fr) | 1973-09-11 | 1973-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5054290A true JPS5054290A (fr) | 1975-05-13 |
Family
ID=14326052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48102388A Pending JPS5054290A (fr) | 1973-09-11 | 1973-09-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5054290A (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5287384A (en) * | 1976-01-15 | 1977-07-21 | Hitachi Ltd | Semiconductor device for photoelectric conversion and its production |
| JPS5928390A (ja) * | 1982-08-10 | 1984-02-15 | Nec Corp | ガ−ドリング付半導体素子 |
| EP0714117A2 (fr) | 1994-11-24 | 1996-05-29 | Hamamatsu Photonics K.K. | Photomultiplicateur |
| US5780913A (en) * | 1995-11-14 | 1998-07-14 | Hamamatsu Photonics K.K. | Photoelectric tube using electron beam irradiation diode as anode |
| WO2009071916A1 (fr) * | 2007-12-06 | 2009-06-11 | The University Of Sheffield | Structure de photodiode infrarouge à avalanche à bruit excédentaire faible et son procédé de fabrication |
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1973
- 1973-09-11 JP JP48102388A patent/JPS5054290A/ja active Pending
Non-Patent Citations (2)
| Title |
|---|
| IEEETRANSACTIDNS ON ELECTRON DEVICES#N5=1967 * |
| JAPANESE JOURNAL OF APPLIED PHYSICS#N5=1970 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5287384A (en) * | 1976-01-15 | 1977-07-21 | Hitachi Ltd | Semiconductor device for photoelectric conversion and its production |
| JPS5723435B2 (fr) * | 1976-01-15 | 1982-05-18 | ||
| JPS5928390A (ja) * | 1982-08-10 | 1984-02-15 | Nec Corp | ガ−ドリング付半導体素子 |
| JPH0468794B2 (fr) * | 1982-08-10 | 1992-11-04 | Nippon Electric Co | |
| EP0714117A2 (fr) | 1994-11-24 | 1996-05-29 | Hamamatsu Photonics K.K. | Photomultiplicateur |
| US5654536A (en) * | 1994-11-24 | 1997-08-05 | Hamamatsu Photonics K.K. | Photomultiplier having a multilayer semiconductor device |
| US5780913A (en) * | 1995-11-14 | 1998-07-14 | Hamamatsu Photonics K.K. | Photoelectric tube using electron beam irradiation diode as anode |
| WO2009071916A1 (fr) * | 2007-12-06 | 2009-06-11 | The University Of Sheffield | Structure de photodiode infrarouge à avalanche à bruit excédentaire faible et son procédé de fabrication |