JPS5044782A - - Google Patents

Info

Publication number
JPS5044782A
JPS5044782A JP49085598A JP8559874A JPS5044782A JP S5044782 A JPS5044782 A JP S5044782A JP 49085598 A JP49085598 A JP 49085598A JP 8559874 A JP8559874 A JP 8559874A JP S5044782 A JPS5044782 A JP S5044782A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49085598A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5044782A publication Critical patent/JPS5044782A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/40—

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP49085598A 1973-07-25 1974-07-25 Pending JPS5044782A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US382626A US3875656A (en) 1973-07-25 1973-07-25 Fabrication technique for high density integrated circuits

Publications (1)

Publication Number Publication Date
JPS5044782A true JPS5044782A (ja) 1975-04-22

Family

ID=23509791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49085598A Pending JPS5044782A (ja) 1973-07-25 1974-07-25

Country Status (3)

Country Link
US (1) US3875656A (ja)
JP (1) JPS5044782A (ja)
DE (1) DE2435892A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294544A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4335504A (en) * 1980-09-24 1982-06-22 Rockwell International Corporation Method of making CMOS devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636418A (en) * 1969-08-06 1972-01-18 Rca Corp Epitaxial semiconductor device having adherent bonding pads

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1BM TECHNICAL DISCLOSURE BULLETIN#N2=1972 *

Also Published As

Publication number Publication date
DE2435892A1 (de) 1975-02-20
US3875656A (en) 1975-04-08

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