JPS503624B1 - - Google Patents

Info

Publication number
JPS503624B1
JPS503624B1 JP46047348A JP4734871A JPS503624B1 JP S503624 B1 JPS503624 B1 JP S503624B1 JP 46047348 A JP46047348 A JP 46047348A JP 4734871 A JP4734871 A JP 4734871A JP S503624 B1 JPS503624 B1 JP S503624B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46047348A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS503624B1 publication Critical patent/JPS503624B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W40/10—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP46047348A 1970-06-30 1971-06-30 Pending JPS503624B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5114770A 1970-06-30 1970-06-30

Publications (1)

Publication Number Publication Date
JPS503624B1 true JPS503624B1 (ja) 1975-02-07

Family

ID=21969627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46047348A Pending JPS503624B1 (ja) 1970-06-30 1971-06-30

Country Status (6)

Country Link
US (1) US3657615A (ja)
JP (1) JPS503624B1 (ja)
BE (1) BE769119A (ja)
DE (1) DE2130122A1 (ja)
FR (1) FR2096602B1 (ja)
GB (1) GB1351289A (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767984A (en) * 1969-09-03 1973-10-23 Nippon Electric Co Schottky barrier type field effect transistor
US3711745A (en) * 1971-10-06 1973-01-16 Microwave Ass Inc Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy
FR2157740B1 (ja) * 1971-10-29 1976-10-29 Thomson Csf
US3855613A (en) * 1973-06-22 1974-12-17 Rca Corp A solid state switch using an improved junction field effect transistor
US4016643A (en) * 1974-10-29 1977-04-12 Raytheon Company Overlay metallization field effect transistor
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
FR2328292A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Nouvelles structures a effet de champ
FR2328290A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Nouvelles structures a effet de champ
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor
US4204893A (en) * 1979-02-16 1980-05-27 Bell Telephone Laboratories, Incorporated Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
DE2906701A1 (de) * 1979-02-21 1980-09-04 Siemens Ag Iii-v-halbleiter-leistungs-mesfet mit verbesserter waermeableitung und verfahren zur herstellung eines solchen transistors
US4253887A (en) * 1979-08-27 1981-03-03 Rca Corporation Method of depositing layers of semi-insulating gallium arsenide
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
DE3005301C2 (de) * 1980-02-13 1985-11-21 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
DE3005302C2 (de) * 1980-02-13 1985-12-12 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
US4688062A (en) * 1984-06-29 1987-08-18 Raytheon Company Semiconductor structure and method of manufacture
US4690143A (en) * 1984-07-19 1987-09-01 Cordis Corporation Pacing lead with piezoelectric power generating means
DE19526739C3 (de) * 1995-07-21 2001-03-29 Gen Semiconductor Ireland Macr Halbleiterbauelement
DE10340438B4 (de) * 2003-09-02 2005-08-04 Epcos Ag Sendemodul mit verbesserter Wärmeabführung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368124A (en) * 1965-12-09 1968-02-06 Rca Corp Semiconductor devices
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode

Also Published As

Publication number Publication date
BE769119A (fr) 1971-12-28
FR2096602B1 (ja) 1976-05-28
DE2130122A1 (de) 1972-01-05
US3657615A (en) 1972-04-18
FR2096602A1 (ja) 1972-02-18
GB1351289A (en) 1974-04-24

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