JPS5034902B1 - - Google Patents

Info

Publication number
JPS5034902B1
JPS5034902B1 JP44093061A JP9306169A JPS5034902B1 JP S5034902 B1 JPS5034902 B1 JP S5034902B1 JP 44093061 A JP44093061 A JP 44093061A JP 9306169 A JP9306169 A JP 9306169A JP S5034902 B1 JPS5034902 B1 JP S5034902B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44093061A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5034902B1 publication Critical patent/JPS5034902B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
JP44093061A 1968-12-23 1969-11-21 Pending JPS5034902B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78606868A 1968-12-23 1968-12-23

Publications (1)

Publication Number Publication Date
JPS5034902B1 true JPS5034902B1 (ja) 1975-11-12

Family

ID=25137501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44093061A Pending JPS5034902B1 (ja) 1968-12-23 1969-11-21

Country Status (5)

Country Link
US (1) US3573573A (ja)
JP (1) JPS5034902B1 (ja)
DE (1) DE1959744A1 (ja)
FR (1) FR2026838A1 (ja)
GB (1) GB1279816A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52134673A (en) * 1976-05-06 1977-11-11 Hitachi Ltd Epoxy preepreg material

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631313A (en) * 1969-11-06 1971-12-28 Intel Corp Resistor for integrated circuit
US3631309A (en) * 1970-07-23 1971-12-28 Semiconductor Elect Memories Integrated circuit bipolar memory cell
JPS509635B1 (ja) * 1970-09-07 1975-04-14
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
DE2530288C3 (de) * 1975-07-07 1982-02-18 Siemens AG, 1000 Berlin und 8000 München Inverter in integrierter Injektionslogik
FR2320635A1 (fr) * 1975-08-05 1977-03-04 Thomson Csf Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
FR2677171B1 (fr) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa Transistor de gain en courant predetermine dans un circuit integre bipolaire.
JPH05102173A (ja) * 1991-10-04 1993-04-23 Rohm Co Ltd 半導体基板の製法
US7064416B2 (en) * 2001-11-16 2006-06-20 International Business Machines Corporation Semiconductor device and method having multiple subcollectors formed on a common wafer
JP4979573B2 (ja) * 2004-04-22 2012-07-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造
US8015538B2 (en) * 2006-10-11 2011-09-06 International Business Machines Corporation Design structure with a deep sub-collector, a reach-through structure and trench isolation
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB958249A (en) * 1959-05-06 1964-05-21 Texas Instruments Inc Semiconductor circuits
NL274363A (ja) * 1960-05-02
NL272904A (ja) * 1960-12-30
NL298196A (ja) * 1962-09-22
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
INTEGRATED CIRCUIT ENGINEERING=1966 *
MICROELECTRONIC CIRCUITS AND APPLICATIONS=1965 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52134673A (en) * 1976-05-06 1977-11-11 Hitachi Ltd Epoxy preepreg material

Also Published As

Publication number Publication date
US3573573A (en) 1971-04-06
DE1959744A1 (de) 1970-07-09
FR2026838A1 (ja) 1970-09-25
GB1279816A (en) 1972-06-28

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