JPS5032435A - - Google Patents

Info

Publication number
JPS5032435A
JPS5032435A JP6882074A JP6882074A JPS5032435A JP S5032435 A JPS5032435 A JP S5032435A JP 6882074 A JP6882074 A JP 6882074A JP 6882074 A JP6882074 A JP 6882074A JP S5032435 A JPS5032435 A JP S5032435A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6882074A
Other languages
Japanese (ja)
Other versions
JPS5327453B2 (US06368395-20020409-C00050.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5032435A publication Critical patent/JPS5032435A/ja
Publication of JPS5327453B2 publication Critical patent/JPS5327453B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101Application of the selenium or tellurium to the foundation plate
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00Electrophoretic coating characterised by the process
    • C25D13/02Electrophoretic coating characterised by the process with inorganic material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207Selenium-based
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP6882074A 1973-06-19 1974-06-18 Expired JPS5327453B2 (US06368395-20020409-C00050.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2892873A GB1434132A (en) 1973-06-19 1973-06-19 Selenium electrophoretic deposition

Publications (2)

Publication Number Publication Date
JPS5032435A true JPS5032435A (US06368395-20020409-C00050.png) 1975-03-29
JPS5327453B2 JPS5327453B2 (US06368395-20020409-C00050.png) 1978-08-08

Family

ID=10283476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6882074A Expired JPS5327453B2 (US06368395-20020409-C00050.png) 1973-06-19 1974-06-18

Country Status (3)

Country Link
JP (1) JPS5327453B2 (US06368395-20020409-C00050.png)
GB (1) GB1434132A (US06368395-20020409-C00050.png)
NL (1) NL7407883A (US06368395-20020409-C00050.png)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122794A (en) * 1975-04-19 1976-10-27 Yoshiharu Koda Method of fitting integral molding of pin receptacle
JPS61156682A (ja) * 1984-12-28 1986-07-16 富士通株式会社 耐水圧給電用端子の製造方法
JPS63118186U (US06368395-20020409-C00050.png) * 1987-01-27 1988-07-30
JPS63118185U (US06368395-20020409-C00050.png) * 1987-01-27 1988-07-30
CN102776524A (zh) * 2011-05-09 2012-11-14 河北天寅生物技术股份有限公司 纳米硒的制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55170570U (US06368395-20020409-C00050.png) * 1979-05-25 1980-12-08
CN104562067B (zh) * 2015-01-29 2017-04-12 桂林理工大学 一种纳米红硒光电材料的制备方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122794A (en) * 1975-04-19 1976-10-27 Yoshiharu Koda Method of fitting integral molding of pin receptacle
JPS61156682A (ja) * 1984-12-28 1986-07-16 富士通株式会社 耐水圧給電用端子の製造方法
JPS63118186U (US06368395-20020409-C00050.png) * 1987-01-27 1988-07-30
JPS63118185U (US06368395-20020409-C00050.png) * 1987-01-27 1988-07-30
JPH0346467Y2 (US06368395-20020409-C00050.png) * 1987-01-27 1991-10-01
JPH057751Y2 (US06368395-20020409-C00050.png) * 1987-01-27 1993-02-26
CN102776524A (zh) * 2011-05-09 2012-11-14 河北天寅生物技术股份有限公司 纳米硒的制备方法
CN102776524B (zh) * 2011-05-09 2015-12-16 河北天寅生物技术有限公司 纳米硒的制备方法

Also Published As

Publication number Publication date
NL7407883A (US06368395-20020409-C00050.png) 1974-12-23
GB1434132A (en) 1976-05-05
JPS5327453B2 (US06368395-20020409-C00050.png) 1978-08-08

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