JPS5030487A - - Google Patents
Info
- Publication number
- JPS5030487A JPS5030487A JP8225173A JP8225173A JPS5030487A JP S5030487 A JPS5030487 A JP S5030487A JP 8225173 A JP8225173 A JP 8225173A JP 8225173 A JP8225173 A JP 8225173A JP S5030487 A JPS5030487 A JP S5030487A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8225173A JPS5030487A (en) | 1973-07-19 | 1973-07-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8225173A JPS5030487A (en) | 1973-07-19 | 1973-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5030487A true JPS5030487A (en) | 1975-03-26 |
Family
ID=13769205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8225173A Pending JPS5030487A (en) | 1973-07-19 | 1973-07-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5030487A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214575A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH05299649A (en) * | 1991-03-19 | 1993-11-12 | Nec Corp | Semiconductor device |
JP2011049407A (en) * | 2009-08-28 | 2011-03-10 | National Institute Of Advanced Industrial Science & Technology | Insulated gate type silicon carbide lateral field effect transistor having recess gate structure |
-
1973
- 1973-07-19 JP JP8225173A patent/JPS5030487A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214575A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH05299649A (en) * | 1991-03-19 | 1993-11-12 | Nec Corp | Semiconductor device |
JP2011049407A (en) * | 2009-08-28 | 2011-03-10 | National Institute Of Advanced Industrial Science & Technology | Insulated gate type silicon carbide lateral field effect transistor having recess gate structure |