JPS5024086A - - Google Patents

Info

Publication number
JPS5024086A
JPS5024086A JP49059416A JP5941674A JPS5024086A JP S5024086 A JPS5024086 A JP S5024086A JP 49059416 A JP49059416 A JP 49059416A JP 5941674 A JP5941674 A JP 5941674A JP S5024086 A JPS5024086 A JP S5024086A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49059416A
Other languages
Japanese (ja)
Other versions
JPS528233B2 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5024086A publication Critical patent/JPS5024086A/ja
Publication of JPS528233B2 publication Critical patent/JPS528233B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/042—Doping, graded, for tapered etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP49059416A 1973-06-28 1974-05-28 Expired JPS528233B2 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US374425A US3892606A (en) 1973-06-28 1973-06-28 Method for forming silicon conductive layers utilizing differential etching rates

Publications (2)

Publication Number Publication Date
JPS5024086A true JPS5024086A (cg-RX-API-DMAC7.html) 1975-03-14
JPS528233B2 JPS528233B2 (cg-RX-API-DMAC7.html) 1977-03-08

Family

ID=23476763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49059416A Expired JPS528233B2 (cg-RX-API-DMAC7.html) 1973-06-28 1974-05-28

Country Status (6)

Country Link
US (1) US3892606A (cg-RX-API-DMAC7.html)
JP (1) JPS528233B2 (cg-RX-API-DMAC7.html)
CA (1) CA1009768A (cg-RX-API-DMAC7.html)
DE (1) DE2422138C2 (cg-RX-API-DMAC7.html)
FR (1) FR2235484B1 (cg-RX-API-DMAC7.html)
GB (1) GB1458278A (cg-RX-API-DMAC7.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
US4026733A (en) * 1975-10-29 1977-05-31 Intel Corporation Process for defining polycrystalline silicon patterns
JPS5290273A (en) * 1976-01-23 1977-07-29 Hitachi Ltd Semiconductor device
US4057895A (en) * 1976-09-20 1977-11-15 General Electric Company Method of forming sloped members of N-type polycrystalline silicon
NL7709481A (nl) * 1977-08-29 1979-03-02 Philips Nv Werkwijze voor het vervaardigen van een dunne film magneetkop en dunne film magneetkop ver- vaardigd met behulp van de werkwijze.
US4217375A (en) * 1977-08-30 1980-08-12 Bell Telephone Laboratories, Incorporated Deposition of doped silicon oxide films
US4176003A (en) * 1978-02-22 1979-11-27 Ncr Corporation Method for enhancing the adhesion of photoresist to polysilicon
US4181564A (en) * 1978-04-24 1980-01-01 Bell Telephone Laboratories, Incorporated Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls
JPS5839374B2 (ja) * 1978-12-26 1983-08-30 松下電器産業株式会社 半導体基板の処理方法
JPS5688818A (en) * 1979-12-17 1981-07-18 Hitachi Ltd Polycrystalline silicon membrane and its production
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59190976U (ja) * 1983-06-06 1984-12-18 カルソニックカンセイ株式会社 自動車用燃焼式ヒ−タ
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
CA1218956A (en) * 1986-01-28 1987-03-10 Thomas Abraham Process for plasma etching polysilicon to produce rounded profile islands
KR970003903B1 (en) * 1987-04-24 1997-03-22 Hitachi Mfg Kk Semiconductor device and fabricating method thereof
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6235639B1 (en) * 1998-11-25 2001-05-22 Micron Technology, Inc. Method of making straight wall containers and the resultant containers
US8716145B2 (en) * 2011-11-29 2014-05-06 Intermolecular, Inc. Critical concentration in etching doped poly silicon with HF/HNO3
WO2014179340A2 (en) * 2013-04-29 2014-11-06 The University Of North Carolina At Chapel Hill Methods and systems for chemically encoding high-resolution shapes in silicon nanowires
US20160380067A1 (en) 2015-06-23 2016-12-29 Globalfoundries Inc. Shaped terminals for a bipolar junction transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758160A (fr) * 1969-10-31 1971-04-01 Fairchild Camera Instr Co Structure metallique a couches multiples et procede de fabrication d'une telle structure
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
JPS4936792B1 (cg-RX-API-DMAC7.html) * 1970-10-15 1974-10-03
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
US3721588A (en) * 1971-08-13 1973-03-20 Motorola Inc Thin single crystal silicon on an insulating substrate and improved dielectric isolation processing method
US3793090A (en) * 1972-11-21 1974-02-19 Ibm Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics

Also Published As

Publication number Publication date
GB1458278A (en) 1976-12-15
DE2422138C2 (de) 1982-04-29
US3892606A (en) 1975-07-01
DE2422138A1 (de) 1975-01-23
JPS528233B2 (cg-RX-API-DMAC7.html) 1977-03-08
FR2235484A1 (cg-RX-API-DMAC7.html) 1975-01-24
CA1009768A (en) 1977-05-03
FR2235484B1 (cg-RX-API-DMAC7.html) 1977-10-28

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