JPS5023980A - - Google Patents

Info

Publication number
JPS5023980A
JPS5023980A JP49056795A JP5679574A JPS5023980A JP S5023980 A JPS5023980 A JP S5023980A JP 49056795 A JP49056795 A JP 49056795A JP 5679574 A JP5679574 A JP 5679574A JP S5023980 A JPS5023980 A JP S5023980A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49056795A
Other versions
JPS5519427B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5023980A publication Critical patent/JPS5023980A/ja
Publication of JPS5519427B2 publication Critical patent/JPS5519427B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316Testing of analog circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP5679574A 1973-06-25 1974-05-22 Expired JPS5519427B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US373042A US3882391A (en) 1973-06-25 1973-06-25 Testing the stability of MOSFET devices

Publications (2)

Publication Number Publication Date
JPS5023980A true JPS5023980A (ja) 1975-03-14
JPS5519427B2 JPS5519427B2 (ja) 1980-05-26

Family

ID=23470672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5679574A Expired JPS5519427B2 (ja) 1973-06-25 1974-05-22

Country Status (6)

Country Link
US (1) US3882391A (ja)
JP (1) JPS5519427B2 (ja)
DE (1) DE2429836A1 (ja)
FR (1) FR2234569B1 (ja)
GB (1) GB1469486A (ja)
IT (1) IT1009961B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190464A (ja) * 1984-10-11 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168432A (en) * 1978-01-16 1979-09-18 Rca Corporation Method of testing radiation hardness of a semiconductor device
US4243937A (en) 1979-04-06 1981-01-06 General Instrument Corporation Microelectronic device and method for testing same
DE3232671A1 (de) * 1982-09-02 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Anordnung und verfahren zur spannungsmessung an einem vergrabenen messobjekt
DE3235100A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung elektrischer potentiale an vergrabener festkoerpersubstanz
US4509012A (en) * 1982-12-30 1985-04-02 Lin Shi Tron Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode
DE3312687A1 (de) * 1983-04-08 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Einrichtung zur pruefung von elektrische schaltkreise enthaltenden prueflingen
US4859938A (en) * 1986-05-05 1989-08-22 Intel Corporation Novel technique to detect oxydonor generation in IC fabrication
US4829243A (en) * 1988-02-19 1989-05-09 Microelectronics And Computer Technology Corporation Electron beam testing of electronic components
FR2674636B1 (fr) * 1991-03-29 1994-07-29 Commissariat Energie Atomique Procede et dispositif de qualification d'un systeme capacitif.
DE19610065A1 (de) * 1996-03-14 1997-09-18 Siemens Ag Verfahren zur Abschätzung der Lebensdauer eines Leistungshalbleiter-Bauelements
US5781445A (en) * 1996-08-22 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma damage monitor
US6472233B1 (en) * 1999-08-02 2002-10-29 Advanced Micro Devices, Inc. MOSFET test structure for capacitance-voltage measurements
US7949985B2 (en) * 2007-06-01 2011-05-24 Synopsys, Inc. Method for compensation of process-induced performance variation in a MOSFET integrated circuit
CN109270423B (zh) * 2018-10-03 2020-11-20 大连理工大学 一种SiC MOSFET器件低温稳定性的评价测试方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3668523A (en) * 1969-05-07 1972-06-06 Bell Telephone Labor Inc Electrical testing of dielectric layers, exhibiting voltage dependent capacitance, with linear ramp voltages

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190464A (ja) * 1984-10-11 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法

Also Published As

Publication number Publication date
FR2234569B1 (ja) 1976-06-25
DE2429836A1 (de) 1975-01-23
JPS5519427B2 (ja) 1980-05-26
GB1469486A (en) 1977-04-06
US3882391A (en) 1975-05-06
FR2234569A1 (ja) 1975-01-17
IT1009961B (it) 1976-12-20

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