JPS5022581A - - Google Patents

Info

Publication number
JPS5022581A
JPS5022581A JP49057996A JP5799674A JPS5022581A JP S5022581 A JPS5022581 A JP S5022581A JP 49057996 A JP49057996 A JP 49057996A JP 5799674 A JP5799674 A JP 5799674A JP S5022581 A JPS5022581 A JP S5022581A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49057996A
Other versions
JPS5517494B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5022581A publication Critical patent/JPS5022581A/ja
Publication of JPS5517494B2 publication Critical patent/JPS5517494B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/10ROM devices comprising bipolar components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P50/693
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Weting (AREA)
JP5799674A 1973-05-25 1974-05-24 Expired JPS5517494B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US363995A US3885994A (en) 1973-05-25 1973-05-25 Bipolar transistor construction method

Publications (2)

Publication Number Publication Date
JPS5022581A true JPS5022581A (ja) 1975-03-11
JPS5517494B2 JPS5517494B2 (ja) 1980-05-12

Family

ID=23432592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5799674A Expired JPS5517494B2 (ja) 1973-05-25 1974-05-24

Country Status (6)

Country Link
US (1) US3885994A (ja)
JP (1) JPS5517494B2 (ja)
CA (1) CA1000873A (ja)
DE (1) DE2419816A1 (ja)
FR (1) FR2231112B1 (ja)
NL (1) NL162247C (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624970A (en) * 1979-08-07 1981-03-10 Nec Corp Manufacture of semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276543A (en) * 1979-03-19 1981-06-30 Trw Inc. Monolithic triple diffusion analog to digital converter
EP0111977B1 (en) * 1982-12-20 1989-04-05 Koninklijke Philips Electronics N.V. Integrated circuit and method
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US3771218A (en) * 1972-07-13 1973-11-13 Ibm Process for fabricating passivated transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624970A (en) * 1979-08-07 1981-03-10 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE2419816A1 (de) 1974-12-05
FR2231112B1 (ja) 1979-02-16
JPS5517494B2 (ja) 1980-05-12
US3885994A (en) 1975-05-27
NL162247C (nl) 1980-04-15
NL7404302A (ja) 1974-11-27
NL162247B (nl) 1979-11-15
FR2231112A1 (ja) 1974-12-20
CA1000873A (en) 1976-11-30

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