JPS5021156B1 - - Google Patents

Info

Publication number
JPS5021156B1
JPS5021156B1 JP45112597A JP11259770A JPS5021156B1 JP S5021156 B1 JPS5021156 B1 JP S5021156B1 JP 45112597 A JP45112597 A JP 45112597A JP 11259770 A JP11259770 A JP 11259770A JP S5021156 B1 JPS5021156 B1 JP S5021156B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45112597A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5021156B1 publication Critical patent/JPS5021156B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/001—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means incorporating means for heating or cooling, e.g. the material to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP45112597A 1970-01-22 1970-12-17 Pending JPS5021156B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US489170A 1970-01-22 1970-01-22

Publications (1)

Publication Number Publication Date
JPS5021156B1 true JPS5021156B1 (ja) 1975-07-21

Family

ID=21713038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45112597A Pending JPS5021156B1 (ja) 1970-01-22 1970-12-17

Country Status (4)

Country Link
US (1) US3630881A (ja)
JP (1) JPS5021156B1 (ja)
DE (1) DE2102352C3 (ja)
GB (1) GB1311042A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54117639U (ja) * 1978-02-06 1979-08-17
CN108788124A (zh) * 2018-05-28 2018-11-13 北京梦之墨科技有限公司 微纳米低熔点金属及其制备方法及导电油墨及印刷方法

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
DE69330702T2 (de) * 1992-10-05 2002-07-11 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
EP0625792B1 (en) * 1993-05-19 1997-05-28 Applied Materials, Inc. Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5738770A (en) * 1996-06-21 1998-04-14 Sony Corporation Mechanically joined sputtering target and adapter therefor
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
DE19916938A1 (de) * 1999-04-15 2000-10-19 Leybold Systems Gmbh Vorrichtung zur Kühlung eines Targets mit einem Kühlmedium
US6551470B1 (en) * 1999-06-15 2003-04-22 Academy Precision Materials Clamp and target assembly
DE19958857B4 (de) * 1999-06-16 2014-09-25 Applied Materials Gmbh & Co. Kg Sputterkathode
WO2001055477A1 (fr) * 2000-01-27 2001-08-02 Nikon Corporation Procede de fabrication d'un film de materiau composite renfermant un element generateur de gaz
US6416634B1 (en) * 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
US6503380B1 (en) * 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
TWI269815B (en) * 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6818249B2 (en) * 2003-03-03 2004-11-16 Micron Technology, Inc. Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7156470B1 (en) * 2004-06-28 2007-01-02 Wright James P Wheel trim hub cover
US7479210B2 (en) * 2005-04-14 2009-01-20 Tango Systems, Inc. Temperature control of pallet in sputtering system
KR20250085049A (ko) * 2023-12-04 2025-06-12 삼성디스플레이 주식회사 스퍼터링 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54117639U (ja) * 1978-02-06 1979-08-17
CN108788124A (zh) * 2018-05-28 2018-11-13 北京梦之墨科技有限公司 微纳米低熔点金属及其制备方法及导电油墨及印刷方法

Also Published As

Publication number Publication date
DE2102352C3 (de) 1981-08-27
US3630881A (en) 1971-12-28
GB1311042A (en) 1973-03-21
DE2102352B2 (de) 1980-10-02
DE2102352A1 (de) 1971-07-29

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