JPS5019397B1 - - Google Patents

Info

Publication number
JPS5019397B1
JPS5019397B1 JP44064770A JP6477069A JPS5019397B1 JP S5019397 B1 JPS5019397 B1 JP S5019397B1 JP 44064770 A JP44064770 A JP 44064770A JP 6477069 A JP6477069 A JP 6477069A JP S5019397 B1 JPS5019397 B1 JP S5019397B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44064770A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5019397B1 publication Critical patent/JPS5019397B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/271—
    • H10P14/276—
    • H10P14/3411—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap
JP44064770A 1968-08-19 1969-08-18 Pending JPS5019397B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75364368A 1968-08-19 1968-08-19

Publications (1)

Publication Number Publication Date
JPS5019397B1 true JPS5019397B1 (ja) 1975-07-07

Family

ID=25031534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44064770A Pending JPS5019397B1 (ja) 1968-08-19 1969-08-18

Country Status (2)

Country Link
US (1) US3574008A (ja)
JP (1) JPS5019397B1 (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
JPS5223715B2 (ja) * 1972-03-27 1977-06-25
US4035607A (en) * 1974-08-29 1977-07-12 Ibm Corporation Integrated heater element array
US3953264A (en) * 1974-08-29 1976-04-27 International Business Machines Corporation Integrated heater element array and fabrication method
US4109050A (en) * 1976-12-09 1978-08-22 General Electric Company Coated silicon-based ceramic composites and method for making same
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
US4400411A (en) * 1982-07-19 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Technique of silicon epitaxial refill
US4507158A (en) * 1983-08-12 1985-03-26 Hewlett-Packard Co. Trench isolated transistors in semiconductor films
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
CA1296816C (en) * 1987-02-28 1992-03-03 Kenji Yamagata Process for producing a semiconductor article
JP2643262B2 (ja) * 1988-03-23 1997-08-20 日本電気株式会社 半導体装置の製造方法
FR2658952A1 (fr) * 1990-02-27 1991-08-30 Thomson Csf Procede de realisation de memoires haute densite.
JP2002270685A (ja) * 2001-03-08 2002-09-20 Mitsubishi Electric Corp 半導体装置の製造方法
US7060516B2 (en) * 2002-09-30 2006-06-13 Bookham Technology, Plc Method for integrating optical devices in a single epitaxial growth step
GB0326321D0 (en) * 2003-11-12 2003-12-17 Univ Warwick Formation of lattice-tuning semiconductor substrates
US20080121932A1 (en) 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
US20070132034A1 (en) * 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same

Also Published As

Publication number Publication date
US3574008A (en) 1971-04-06

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