JPS5017992A - - Google Patents
Info
- Publication number
- JPS5017992A JPS5017992A JP6935173A JP6935173A JPS5017992A JP S5017992 A JPS5017992 A JP S5017992A JP 6935173 A JP6935173 A JP 6935173A JP 6935173 A JP6935173 A JP 6935173A JP S5017992 A JPS5017992 A JP S5017992A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6935173A JPS5017992A (en) | 1973-06-19 | 1973-06-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6935173A JPS5017992A (en) | 1973-06-19 | 1973-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5017992A true JPS5017992A (en) | 1975-02-25 |
Family
ID=13400037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6935173A Pending JPS5017992A (en) | 1973-06-19 | 1973-06-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5017992A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516412A (en) * | 1978-07-21 | 1980-02-05 | Hitachi Ltd | Semiconductor device |
JPS5816559A (en) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | Manufacture of semiconductor device |
US6850120B2 (en) | 2002-02-15 | 2005-02-01 | Renesas Technology Corp. | Semiconductor device including semiconductor element of high breakdown voltage |
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1973
- 1973-06-19 JP JP6935173A patent/JPS5017992A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516412A (en) * | 1978-07-21 | 1980-02-05 | Hitachi Ltd | Semiconductor device |
JPS5816559A (en) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | Manufacture of semiconductor device |
US6850120B2 (en) | 2002-02-15 | 2005-02-01 | Renesas Technology Corp. | Semiconductor device including semiconductor element of high breakdown voltage |