JPS5017584A - - Google Patents

Info

Publication number
JPS5017584A
JPS5017584A JP49051078A JP5107874A JPS5017584A JP S5017584 A JPS5017584 A JP S5017584A JP 49051078 A JP49051078 A JP 49051078A JP 5107874 A JP5107874 A JP 5107874A JP S5017584 A JPS5017584 A JP S5017584A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49051078A
Other languages
Japanese (ja)
Other versions
JPS5516457B2 (index.php
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5017584A publication Critical patent/JPS5017584A/ja
Publication of JPS5516457B2 publication Critical patent/JPS5516457B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P76/40—
    • H10W10/012—
    • H10W10/0121—
    • H10W10/13—
    • H10W20/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP5107874A 1973-05-07 1974-05-07 Expired JPS5516457B2 (index.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US357968A US3873989A (en) 1973-05-07 1973-05-07 Double-diffused, lateral transistor structure

Publications (2)

Publication Number Publication Date
JPS5017584A true JPS5017584A (index.php) 1975-02-24
JPS5516457B2 JPS5516457B2 (index.php) 1980-05-02

Family

ID=23407766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5107874A Expired JPS5516457B2 (index.php) 1973-05-07 1974-05-07

Country Status (8)

Country Link
US (1) US3873989A (index.php)
JP (1) JPS5516457B2 (index.php)
CA (1) CA994923A (index.php)
DE (1) DE2420239A1 (index.php)
FR (1) FR2229140B1 (index.php)
GB (2) GB1470211A (index.php)
HK (2) HK47280A (index.php)
NL (1) NL7406111A (index.php)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216187A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Semiconductor integrated circuit device and its producing method
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS5438775A (en) * 1977-08-31 1979-03-23 Ibm Lateral bipolar transistor
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
USD962059S1 (en) 2016-03-22 2022-08-30 Zume, Inc. Food container cover
USD992963S1 (en) 2019-08-15 2023-07-25 Zume, Inc. Lid for a food container

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180466C (nl) * 1974-03-15 1987-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal.
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
NL7507733A (nl) * 1975-06-30 1977-01-03 Philips Nv Halfgeleiderinrichting.
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
US6828650B2 (en) * 2002-05-31 2004-12-07 Motorola, Inc. Bipolar junction transistor structure with improved current gain characteristics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713008A (en) * 1962-11-26 1973-01-23 Siemens Ag Semiconductor devices having at least four regions of alternately different conductance type
US3473979A (en) * 1963-01-29 1969-10-21 Motorola Inc Semiconductor device
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216187A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Semiconductor integrated circuit device and its producing method
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS5438775A (en) * 1977-08-31 1979-03-23 Ibm Lateral bipolar transistor
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
USD962059S1 (en) 2016-03-22 2022-08-30 Zume, Inc. Food container cover
USD992963S1 (en) 2019-08-15 2023-07-25 Zume, Inc. Lid for a food container

Also Published As

Publication number Publication date
NL7406111A (index.php) 1974-11-11
FR2229140B1 (index.php) 1978-08-11
GB1470212A (en) 1977-04-14
GB1470211A (en) 1977-04-14
HK47280A (en) 1980-09-05
JPS5516457B2 (index.php) 1980-05-02
HK47180A (en) 1980-09-05
CA994923A (en) 1976-08-10
DE2420239A1 (de) 1974-11-28
AU6805874A (en) 1975-10-23
FR2229140A1 (index.php) 1974-12-06
US3873989A (en) 1975-03-25

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