JPS5017584A - - Google Patents

Info

Publication number
JPS5017584A
JPS5017584A JP49051078A JP5107874A JPS5017584A JP S5017584 A JPS5017584 A JP S5017584A JP 49051078 A JP49051078 A JP 49051078A JP 5107874 A JP5107874 A JP 5107874A JP S5017584 A JPS5017584 A JP S5017584A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49051078A
Other languages
Japanese (ja)
Other versions
JPS5516457B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5017584A publication Critical patent/JPS5017584A/ja
Publication of JPS5516457B2 publication Critical patent/JPS5516457B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/60Lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P76/40
    • H10W10/012
    • H10W10/0121
    • H10W10/13
    • H10W20/20
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/096Lateral transistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/117Oxidation, selective

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP5107874A 1973-05-07 1974-05-07 Expired JPS5516457B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US357968A US3873989A (en) 1973-05-07 1973-05-07 Double-diffused, lateral transistor structure

Publications (2)

Publication Number Publication Date
JPS5017584A true JPS5017584A (cg-RX-API-DMAC10.html) 1975-02-24
JPS5516457B2 JPS5516457B2 (cg-RX-API-DMAC10.html) 1980-05-02

Family

ID=23407766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5107874A Expired JPS5516457B2 (cg-RX-API-DMAC10.html) 1973-05-07 1974-05-07

Country Status (8)

Country Link
US (1) US3873989A (cg-RX-API-DMAC10.html)
JP (1) JPS5516457B2 (cg-RX-API-DMAC10.html)
CA (1) CA994923A (cg-RX-API-DMAC10.html)
DE (1) DE2420239A1 (cg-RX-API-DMAC10.html)
FR (1) FR2229140B1 (cg-RX-API-DMAC10.html)
GB (2) GB1470211A (cg-RX-API-DMAC10.html)
HK (2) HK47280A (cg-RX-API-DMAC10.html)
NL (1) NL7406111A (cg-RX-API-DMAC10.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216187A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Semiconductor integrated circuit device and its producing method
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS5438775A (en) * 1977-08-31 1979-03-23 Ibm Lateral bipolar transistor
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
USD962059S1 (en) 2016-03-22 2022-08-30 Zume, Inc. Food container cover
USD992963S1 (en) 2019-08-15 2023-07-25 Zume, Inc. Lid for a food container

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180466C (nl) * 1974-03-15 1987-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal.
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
NL7507733A (nl) * 1975-06-30 1977-01-03 Philips Nv Halfgeleiderinrichting.
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
US6828650B2 (en) * 2002-05-31 2004-12-07 Motorola, Inc. Bipolar junction transistor structure with improved current gain characteristics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713008A (en) * 1962-11-26 1973-01-23 Siemens Ag Semiconductor devices having at least four regions of alternately different conductance type
US3473979A (en) * 1963-01-29 1969-10-21 Motorola Inc Semiconductor device
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216187A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Semiconductor integrated circuit device and its producing method
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS5438775A (en) * 1977-08-31 1979-03-23 Ibm Lateral bipolar transistor
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
USD962059S1 (en) 2016-03-22 2022-08-30 Zume, Inc. Food container cover
USD992963S1 (en) 2019-08-15 2023-07-25 Zume, Inc. Lid for a food container

Also Published As

Publication number Publication date
HK47280A (en) 1980-09-05
FR2229140A1 (cg-RX-API-DMAC10.html) 1974-12-06
CA994923A (en) 1976-08-10
FR2229140B1 (cg-RX-API-DMAC10.html) 1978-08-11
DE2420239A1 (de) 1974-11-28
AU6805874A (en) 1975-10-23
NL7406111A (cg-RX-API-DMAC10.html) 1974-11-11
US3873989A (en) 1975-03-25
GB1470211A (en) 1977-04-14
HK47180A (en) 1980-09-05
JPS5516457B2 (cg-RX-API-DMAC10.html) 1980-05-02
GB1470212A (en) 1977-04-14

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