JPS50159256A - - Google Patents
Info
- Publication number
- JPS50159256A JPS50159256A JP50050848A JP5084875A JPS50159256A JP S50159256 A JPS50159256 A JP S50159256A JP 50050848 A JP50050848 A JP 50050848A JP 5084875 A JP5084875 A JP 5084875A JP S50159256 A JPS50159256 A JP S50159256A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P10/12—
-
- H10P95/50—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/464,801 US3988766A (en) | 1974-04-29 | 1974-04-29 | Multiple P-N junction formation with an alloy droplet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50159256A true JPS50159256A (esLanguage) | 1975-12-23 |
Family
ID=23845280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50050848A Pending JPS50159256A (esLanguage) | 1974-04-29 | 1975-04-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3988766A (esLanguage) |
| JP (1) | JPS50159256A (esLanguage) |
| DE (1) | DE2517252A1 (esLanguage) |
| FR (1) | FR2269201A1 (esLanguage) |
| SE (1) | SE7504932L (esLanguage) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52122469A (en) * | 1976-03-09 | 1977-10-14 | Gen Electric | Improved method of making semiconductor device |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021269A (en) * | 1975-11-26 | 1977-05-03 | General Electric Company | Post diffusion after temperature gradient zone melting |
| US4160679A (en) * | 1978-09-13 | 1979-07-10 | General Electric Company | Migration of fine liquid wires by thermal gradient zone melting through doped surfaces |
| US4178192A (en) * | 1978-09-13 | 1979-12-11 | General Electric Company | Promotion of surface film stability during initiation of thermal migration |
| US4159215A (en) * | 1978-09-21 | 1979-06-26 | General Electric Company | Droplet migration doping using reactive carriers and dopants |
| US4159216A (en) * | 1978-09-21 | 1979-06-26 | General Electric Company | Enhanced line stability by alloying of deposition |
| US4184897A (en) * | 1978-09-21 | 1980-01-22 | General Electric Company | Droplet migration doping using carrier droplets |
| US4198247A (en) * | 1978-12-07 | 1980-04-15 | General Electric Company | Sealant films for materials having high intrinsic vapor pressure |
| US4190467A (en) * | 1978-12-15 | 1980-02-26 | Western Electric Co., Inc. | Semiconductor device production |
| US5237200A (en) * | 1989-07-28 | 1993-08-17 | Hitachi, Ltd. | Semiconductor bipolar transistor with concentric regions |
| DE69402221T2 (de) * | 1993-01-29 | 1997-08-14 | Nat Semiconductor Corp | Bipolartransistoren und deren Herstellungsverfahren |
| TWI384584B (zh) * | 2008-05-09 | 2013-02-01 | Jack Kuo | 半導體雜質接面製程 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
| US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
| US3617399A (en) * | 1968-10-31 | 1971-11-02 | Texas Instruments Inc | Method of fabricating semiconductor power devices within high resistivity isolation rings |
| US3656028A (en) * | 1969-05-12 | 1972-04-11 | Ibm | Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon |
| US3769105A (en) * | 1970-01-26 | 1973-10-30 | Ibm | Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor |
-
1974
- 1974-04-29 US US05/464,801 patent/US3988766A/en not_active Expired - Lifetime
-
1975
- 1975-04-18 DE DE19752517252 patent/DE2517252A1/de active Pending
- 1975-04-28 SE SE7504932A patent/SE7504932L/xx unknown
- 1975-04-28 JP JP50050848A patent/JPS50159256A/ja active Pending
- 1975-04-29 FR FR7513318A patent/FR2269201A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52122469A (en) * | 1976-03-09 | 1977-10-14 | Gen Electric | Improved method of making semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2269201A1 (esLanguage) | 1975-11-21 |
| US3988766A (en) | 1976-10-26 |
| SE7504932L (sv) | 1975-10-30 |
| DE2517252A1 (de) | 1975-11-06 |