JPS50156377A - - Google Patents
Info
- Publication number
- JPS50156377A JPS50156377A JP6294774A JP6294774A JPS50156377A JP S50156377 A JPS50156377 A JP S50156377A JP 6294774 A JP6294774 A JP 6294774A JP 6294774 A JP6294774 A JP 6294774A JP S50156377 A JPS50156377 A JP S50156377A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6294774A JPS50156377A (ja) | 1974-06-05 | 1974-06-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6294774A JPS50156377A (ja) | 1974-06-05 | 1974-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50156377A true JPS50156377A (ja) | 1975-12-17 |
Family
ID=13214997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6294774A Pending JPS50156377A (ja) | 1974-06-05 | 1974-06-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS50156377A (ja) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5296871A (en) * | 1976-02-10 | 1977-08-15 | Matsushita Electric Ind Co Ltd | Manufacture of mos type transistor |
| JPS52124166U (ja) * | 1976-03-16 | 1977-09-21 | ||
| JPS57148374A (en) * | 1981-03-09 | 1982-09-13 | Toshiba Corp | Manufacture of mos type semiconductor device |
| JPH01186676A (ja) * | 1988-01-14 | 1989-07-26 | Pioneer Electron Corp | 電界効果トランジスタ |
| US6022780A (en) * | 1996-12-06 | 2000-02-08 | Nec Corporation | Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof |
| US7622343B2 (en) | 1992-10-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same |
-
1974
- 1974-06-05 JP JP6294774A patent/JPS50156377A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5296871A (en) * | 1976-02-10 | 1977-08-15 | Matsushita Electric Ind Co Ltd | Manufacture of mos type transistor |
| JPS52124166U (ja) * | 1976-03-16 | 1977-09-21 | ||
| JPS57148374A (en) * | 1981-03-09 | 1982-09-13 | Toshiba Corp | Manufacture of mos type semiconductor device |
| JPH01186676A (ja) * | 1988-01-14 | 1989-07-26 | Pioneer Electron Corp | 電界効果トランジスタ |
| US7622343B2 (en) | 1992-10-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same |
| US6022780A (en) * | 1996-12-06 | 2000-02-08 | Nec Corporation | Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof |