JPS50154082A - - Google Patents
Info
- Publication number
- JPS50154082A JPS50154082A JP6235074A JP6235074A JPS50154082A JP S50154082 A JPS50154082 A JP S50154082A JP 6235074 A JP6235074 A JP 6235074A JP 6235074 A JP6235074 A JP 6235074A JP S50154082 A JPS50154082 A JP S50154082A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6235074A JPS571912B2 (en) | 1974-05-31 | 1974-05-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6235074A JPS571912B2 (en) | 1974-05-31 | 1974-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50154082A true JPS50154082A (en) | 1975-12-11 |
JPS571912B2 JPS571912B2 (en) | 1982-01-13 |
Family
ID=13197573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6235074A Expired JPS571912B2 (en) | 1974-05-31 | 1974-05-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS571912B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681994A (en) * | 1979-12-07 | 1981-07-04 | Seiji Yasu | Field effect type semiconductor laser and manufacture thereof |
JPS56104488A (en) * | 1980-01-23 | 1981-08-20 | Hitachi Ltd | Semiconductor laser element |
JPS57126192A (en) * | 1981-01-29 | 1982-08-05 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS58501567A (en) * | 1981-09-28 | 1983-09-16 | ウエスタ−ン エレクトリツク カムパニ−,インコ−ポレ−テツド | Semiconductor laser with conductive current mask |
JPS63313887A (en) * | 1987-06-16 | 1988-12-21 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical electronic element |
JPS63313888A (en) * | 1987-06-16 | 1988-12-21 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical electronic element |
JP2016027637A (en) * | 2014-06-27 | 2016-02-18 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Pn junction optoelectronic device for ionizing dopant by electric field effect |
-
1974
- 1974-05-31 JP JP6235074A patent/JPS571912B2/ja not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681994A (en) * | 1979-12-07 | 1981-07-04 | Seiji Yasu | Field effect type semiconductor laser and manufacture thereof |
JPS5723438B2 (en) * | 1979-12-07 | 1982-05-18 | ||
JPS56104488A (en) * | 1980-01-23 | 1981-08-20 | Hitachi Ltd | Semiconductor laser element |
JPH0156548B2 (en) * | 1980-01-23 | 1989-11-30 | Hitachi Ltd | |
JPS57126192A (en) * | 1981-01-29 | 1982-08-05 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS58501567A (en) * | 1981-09-28 | 1983-09-16 | ウエスタ−ン エレクトリツク カムパニ−,インコ−ポレ−テツド | Semiconductor laser with conductive current mask |
JPS63313887A (en) * | 1987-06-16 | 1988-12-21 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical electronic element |
JPS63313888A (en) * | 1987-06-16 | 1988-12-21 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical electronic element |
JP2016027637A (en) * | 2014-06-27 | 2016-02-18 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Pn junction optoelectronic device for ionizing dopant by electric field effect |
Also Published As
Publication number | Publication date |
---|---|
JPS571912B2 (en) | 1982-01-13 |