JPS50129176A - - Google Patents
Info
- Publication number
- JPS50129176A JPS50129176A JP50034227A JP3422775A JPS50129176A JP S50129176 A JPS50129176 A JP S50129176A JP 50034227 A JP50034227 A JP 50034227A JP 3422775 A JP3422775 A JP 3422775A JP S50129176 A JPS50129176 A JP S50129176A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2414856A DE2414856C2 (de) | 1974-03-27 | 1974-03-27 | Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50129176A true JPS50129176A (US20020128544A1-20020912-P00008.png) | 1975-10-13 |
Family
ID=5911367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50034227A Pending JPS50129176A (US20020128544A1-20020912-P00008.png) | 1974-03-27 | 1975-03-20 |
Country Status (5)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7605234A (nl) * | 1976-05-17 | 1977-11-21 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| US4553853A (en) * | 1984-02-27 | 1985-11-19 | International Business Machines Corporation | End point detector for a tin lead evaporator |
| JPH0766910B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長装置 |
| US5178719A (en) * | 1991-08-20 | 1993-01-12 | Horiba Instruments, Inc. | Continuous refill crystal growth method |
| US5540780A (en) * | 1995-06-23 | 1996-07-30 | The United States Of America As Represented By The Secretary Of The Air Force | Molecular beam epitaxy effusion cell |
| US11130261B2 (en) * | 2019-03-28 | 2021-09-28 | The Boeing Company | Steerable heat source |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4862381A (US20020128544A1-20020912-P00008.png) * | 1971-12-04 | 1973-08-31 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US986180A (en) * | 1910-09-21 | 1911-03-07 | George A Koenig | Process of extracting vanadium from its ores. |
| US2893847A (en) * | 1954-02-23 | 1959-07-07 | Siemens Ag | Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies |
| DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
| FR1315934A (fr) * | 1961-12-15 | 1963-01-25 | Radiotechnique | Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs |
| DE2021345A1 (de) * | 1970-04-30 | 1972-01-13 | Siemens Ag | Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff |
| US3877883A (en) * | 1973-07-13 | 1975-04-15 | Rca Corp | Method of growing single crystals of compounds |
| US3884642A (en) * | 1973-07-23 | 1975-05-20 | Applied Materials Inc | Radiantly heated crystal growing furnace |
-
1974
- 1974-03-27 DE DE2414856A patent/DE2414856C2/de not_active Expired
-
1975
- 1975-03-13 CH CH317175A patent/CH594445A5/xx not_active IP Right Cessation
- 1975-03-17 US US05/559,016 patent/US4018566A/en not_active Expired - Lifetime
- 1975-03-20 JP JP50034227A patent/JPS50129176A/ja active Pending
- 1975-03-27 GB GB13088/75A patent/GB1491121A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4862381A (US20020128544A1-20020912-P00008.png) * | 1971-12-04 | 1973-08-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2414856C2 (de) | 1983-01-27 |
| GB1491121A (en) | 1977-11-09 |
| US4018566A (en) | 1977-04-19 |
| CH594445A5 (US20020128544A1-20020912-P00008.png) | 1978-01-13 |
| DE2414856A1 (de) | 1975-10-16 |
