JPS50120282A - - Google Patents

Info

Publication number
JPS50120282A
JPS50120282A JP2594374A JP2594374A JPS50120282A JP S50120282 A JPS50120282 A JP S50120282A JP 2594374 A JP2594374 A JP 2594374A JP 2594374 A JP2594374 A JP 2594374A JP S50120282 A JPS50120282 A JP S50120282A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2594374A
Other languages
Japanese (ja)
Other versions
JPS5638074B2 (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2594374A priority Critical patent/JPS5638074B2/ja
Priority to CA75220991A priority patent/CA1049127A/en
Priority to FR7506766A priority patent/FR2264392B1/fr
Priority to GB9154/75A priority patent/GB1503983A/en
Priority to DE2509585A priority patent/DE2509585C3/de
Publication of JPS50120282A publication Critical patent/JPS50120282A/ja
Priority to US05/968,924 priority patent/US4255755A/en
Publication of JPS5638074B2 publication Critical patent/JPS5638074B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2594374A 1974-03-05 1974-03-05 Expired JPS5638074B2 (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2594374A JPS5638074B2 (zh) 1974-03-05 1974-03-05
CA75220991A CA1049127A (en) 1974-03-05 1975-02-28 Semiconductor devices with improved heat radiation and current concentration
FR7506766A FR2264392B1 (zh) 1974-03-05 1975-03-04
GB9154/75A GB1503983A (en) 1974-03-05 1975-03-05 Semiconductor device
DE2509585A DE2509585C3 (de) 1974-03-05 1975-03-05 Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
US05/968,924 US4255755A (en) 1974-03-05 1978-12-13 Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2594374A JPS5638074B2 (zh) 1974-03-05 1974-03-05

Publications (2)

Publication Number Publication Date
JPS50120282A true JPS50120282A (zh) 1975-09-20
JPS5638074B2 JPS5638074B2 (zh) 1981-09-03

Family

ID=12179823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2594374A Expired JPS5638074B2 (zh) 1974-03-05 1974-03-05

Country Status (1)

Country Link
JP (1) JPS5638074B2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778663U (zh) * 1981-08-27 1982-05-15
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778663U (zh) * 1981-08-27 1982-05-15
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法

Also Published As

Publication number Publication date
JPS5638074B2 (zh) 1981-09-03

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