JPS50120258A - - Google Patents

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Publication number
JPS50120258A
JPS50120258A JP2594574A JP2594574A JPS50120258A JP S50120258 A JPS50120258 A JP S50120258A JP 2594574 A JP2594574 A JP 2594574A JP 2594574 A JP2594574 A JP 2594574A JP S50120258 A JPS50120258 A JP S50120258A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2594574A
Other languages
Japanese (ja)
Other versions
JPS5756204B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49025945A priority Critical patent/JPS5756204B2/ja
Priority to CA75220991A priority patent/CA1049127A/en
Priority to FR7506766A priority patent/FR2264392B1/fr
Priority to GB9154/75A priority patent/GB1503983A/en
Priority to DE2509585A priority patent/DE2509585C3/de
Publication of JPS50120258A publication Critical patent/JPS50120258A/ja
Priority to US05/968,924 priority patent/US4255755A/en
Publication of JPS5756204B2 publication Critical patent/JPS5756204B2/ja
Expired legal-status Critical Current

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  • Led Devices (AREA)
JP49025945A 1974-03-05 1974-03-05 Expired JPS5756204B2 (OSRAM)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP49025945A JPS5756204B2 (OSRAM) 1974-03-05 1974-03-05
CA75220991A CA1049127A (en) 1974-03-05 1975-02-28 Semiconductor devices with improved heat radiation and current concentration
FR7506766A FR2264392B1 (OSRAM) 1974-03-05 1975-03-04
GB9154/75A GB1503983A (en) 1974-03-05 1975-03-05 Semiconductor device
DE2509585A DE2509585C3 (de) 1974-03-05 1975-03-05 Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
US05/968,924 US4255755A (en) 1974-03-05 1978-12-13 Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49025945A JPS5756204B2 (OSRAM) 1974-03-05 1974-03-05

Publications (2)

Publication Number Publication Date
JPS50120258A true JPS50120258A (OSRAM) 1975-09-20
JPS5756204B2 JPS5756204B2 (OSRAM) 1982-11-29

Family

ID=12179883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49025945A Expired JPS5756204B2 (OSRAM) 1974-03-05 1974-03-05

Country Status (1)

Country Link
JP (1) JPS5756204B2 (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231664A (en) * 1975-09-04 1977-03-10 Fujitsu Ltd Production method of semiconductor device
JPS5269264A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Selected diffusion method
JPS5275269A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Selective diffusion method
JPS52106682A (en) * 1976-03-05 1977-09-07 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor
JPS5710924A (en) * 1980-06-24 1982-01-20 Mitsubishi Electric Corp Selective diffusion process for impurity into semiconductor crystal
JPS5885524A (ja) * 1981-11-16 1983-05-21 Mitsubishi Electric Corp 半導体への不純物の拡散方法
JPS62139320A (ja) * 1985-12-13 1987-06-23 Furukawa Electric Co Ltd:The 化合物半導体への選択固相拡散方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832469A (OSRAM) * 1971-08-31 1973-04-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832469A (OSRAM) * 1971-08-31 1973-04-28

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231664A (en) * 1975-09-04 1977-03-10 Fujitsu Ltd Production method of semiconductor device
JPS5269264A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Selected diffusion method
JPS5275269A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Selective diffusion method
JPS52106682A (en) * 1976-03-05 1977-09-07 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor
JPS5710924A (en) * 1980-06-24 1982-01-20 Mitsubishi Electric Corp Selective diffusion process for impurity into semiconductor crystal
JPS5885524A (ja) * 1981-11-16 1983-05-21 Mitsubishi Electric Corp 半導体への不純物の拡散方法
JPS62139320A (ja) * 1985-12-13 1987-06-23 Furukawa Electric Co Ltd:The 化合物半導体への選択固相拡散方法

Also Published As

Publication number Publication date
JPS5756204B2 (OSRAM) 1982-11-29

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