JPS50120258A - - Google Patents
Info
- Publication number
- JPS50120258A JPS50120258A JP2594574A JP2594574A JPS50120258A JP S50120258 A JPS50120258 A JP S50120258A JP 2594574 A JP2594574 A JP 2594574A JP 2594574 A JP2594574 A JP 2594574A JP S50120258 A JPS50120258 A JP S50120258A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Led Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49025945A JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-05 | 1974-03-05 | |
| CA75220991A CA1049127A (en) | 1974-03-05 | 1975-02-28 | Semiconductor devices with improved heat radiation and current concentration |
| FR7506766A FR2264392B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-05 | 1975-03-04 | |
| DE2509585A DE2509585C3 (de) | 1974-03-05 | 1975-03-05 | Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung |
| GB9154/75A GB1503983A (en) | 1974-03-05 | 1975-03-05 | Semiconductor device |
| US05/968,924 US4255755A (en) | 1974-03-05 | 1978-12-13 | Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49025945A JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-05 | 1974-03-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50120258A true JPS50120258A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-09-20 |
| JPS5756204B2 JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-11-29 |
Family
ID=12179883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49025945A Expired JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-05 | 1974-03-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5231664A (en) * | 1975-09-04 | 1977-03-10 | Fujitsu Ltd | Production method of semiconductor device |
| JPS5269264A (en) * | 1975-12-05 | 1977-06-08 | Matsushita Electronics Corp | Selected diffusion method |
| JPS5275269A (en) * | 1975-12-19 | 1977-06-24 | Matsushita Electronics Corp | Selective diffusion method |
| JPS52106682A (en) * | 1976-03-05 | 1977-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of semiconductor |
| JPS5710924A (en) * | 1980-06-24 | 1982-01-20 | Mitsubishi Electric Corp | Selective diffusion process for impurity into semiconductor crystal |
| JPS5885524A (ja) * | 1981-11-16 | 1983-05-21 | Mitsubishi Electric Corp | 半導体への不純物の拡散方法 |
| JPS62139320A (ja) * | 1985-12-13 | 1987-06-23 | Furukawa Electric Co Ltd:The | 化合物半導体への選択固相拡散方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4832469A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-08-31 | 1973-04-28 |
-
1974
- 1974-03-05 JP JP49025945A patent/JPS5756204B2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4832469A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-08-31 | 1973-04-28 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5231664A (en) * | 1975-09-04 | 1977-03-10 | Fujitsu Ltd | Production method of semiconductor device |
| JPS5269264A (en) * | 1975-12-05 | 1977-06-08 | Matsushita Electronics Corp | Selected diffusion method |
| JPS5275269A (en) * | 1975-12-19 | 1977-06-24 | Matsushita Electronics Corp | Selective diffusion method |
| JPS52106682A (en) * | 1976-03-05 | 1977-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of semiconductor |
| JPS5710924A (en) * | 1980-06-24 | 1982-01-20 | Mitsubishi Electric Corp | Selective diffusion process for impurity into semiconductor crystal |
| JPS5885524A (ja) * | 1981-11-16 | 1983-05-21 | Mitsubishi Electric Corp | 半導体への不純物の拡散方法 |
| JPS62139320A (ja) * | 1985-12-13 | 1987-06-23 | Furukawa Electric Co Ltd:The | 化合物半導体への選択固相拡散方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5756204B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-11-29 |