JPS50119774A - - Google Patents

Info

Publication number
JPS50119774A
JPS50119774A JP2594674A JP2594674A JPS50119774A JP S50119774 A JPS50119774 A JP S50119774A JP 2594674 A JP2594674 A JP 2594674A JP 2594674 A JP2594674 A JP 2594674A JP S50119774 A JPS50119774 A JP S50119774A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2594674A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2594674A priority Critical patent/JPS50119774A/ja
Priority to CA75220991A priority patent/CA1049127A/en
Priority to FR7506766A priority patent/FR2264392B1/fr
Priority to DE2509585A priority patent/DE2509585C3/de
Priority to GB9154/75A priority patent/GB1503983A/en
Publication of JPS50119774A publication Critical patent/JPS50119774A/ja
Priority to US05/968,924 priority patent/US4255755A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP2594674A 1974-03-05 1974-03-05 Pending JPS50119774A (enrdf_load_stackoverflow)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2594674A JPS50119774A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05
CA75220991A CA1049127A (en) 1974-03-05 1975-02-28 Semiconductor devices with improved heat radiation and current concentration
FR7506766A FR2264392B1 (enrdf_load_stackoverflow) 1974-03-05 1975-03-04
DE2509585A DE2509585C3 (de) 1974-03-05 1975-03-05 Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
GB9154/75A GB1503983A (en) 1974-03-05 1975-03-05 Semiconductor device
US05/968,924 US4255755A (en) 1974-03-05 1978-12-13 Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2594674A JPS50119774A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Publications (1)

Publication Number Publication Date
JPS50119774A true JPS50119774A (enrdf_load_stackoverflow) 1975-09-19

Family

ID=12179909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2594674A Pending JPS50119774A (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Country Status (1)

Country Link
JP (1) JPS50119774A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57140399A (en) * 1981-02-23 1982-08-30 Toshiba Corp Liquid phase epitaxial growing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57140399A (en) * 1981-02-23 1982-08-30 Toshiba Corp Liquid phase epitaxial growing method

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