JPS50118976A - - Google Patents

Info

Publication number
JPS50118976A
JPS50118976A JP2455774A JP2455774A JPS50118976A JP S50118976 A JPS50118976 A JP S50118976A JP 2455774 A JP2455774 A JP 2455774A JP 2455774 A JP2455774 A JP 2455774A JP S50118976 A JPS50118976 A JP S50118976A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2455774A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2455774A priority Critical patent/JPS50118976A/ja
Publication of JPS50118976A publication Critical patent/JPS50118976A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2455774A 1974-03-01 1974-03-01 Pending JPS50118976A (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2455774A JPS50118976A (nl) 1974-03-01 1974-03-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2455774A JPS50118976A (nl) 1974-03-01 1974-03-01

Publications (1)

Publication Number Publication Date
JPS50118976A true JPS50118976A (nl) 1975-09-18

Family

ID=12141449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2455774A Pending JPS50118976A (nl) 1974-03-01 1974-03-01

Country Status (1)

Country Link
JP (1) JPS50118976A (nl)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190297A (ja) * 1983-04-12 1984-10-29 Agency Of Ind Science & Technol 有機金属気相結晶成長方法
JPH02199875A (ja) * 1989-01-30 1990-08-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子およびその製造方法
JPH0318747A (ja) * 1989-06-16 1991-01-28 Nippon Philips Kk 格子定数比測定方法及び測定装置
JPH03103393A (ja) * 1989-09-18 1991-04-30 Ulvac Japan Ltd 真空成膜中の膜表面の元素組成分析方法、及び真空成膜方法
JP2012101977A (ja) * 2010-11-10 2012-05-31 Hitachi Cable Ltd 窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190297A (ja) * 1983-04-12 1984-10-29 Agency Of Ind Science & Technol 有機金属気相結晶成長方法
JPH02199875A (ja) * 1989-01-30 1990-08-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子およびその製造方法
JPH0318747A (ja) * 1989-06-16 1991-01-28 Nippon Philips Kk 格子定数比測定方法及び測定装置
JPH03103393A (ja) * 1989-09-18 1991-04-30 Ulvac Japan Ltd 真空成膜中の膜表面の元素組成分析方法、及び真空成膜方法
JP2012101977A (ja) * 2010-11-10 2012-05-31 Hitachi Cable Ltd 窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法

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