JPS50118976A - - Google Patents
Info
- Publication number
- JPS50118976A JPS50118976A JP2455774A JP2455774A JPS50118976A JP S50118976 A JPS50118976 A JP S50118976A JP 2455774 A JP2455774 A JP 2455774A JP 2455774 A JP2455774 A JP 2455774A JP S50118976 A JPS50118976 A JP S50118976A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455774A JPS50118976A (nl) | 1974-03-01 | 1974-03-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455774A JPS50118976A (nl) | 1974-03-01 | 1974-03-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50118976A true JPS50118976A (nl) | 1975-09-18 |
Family
ID=12141449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2455774A Pending JPS50118976A (nl) | 1974-03-01 | 1974-03-01 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50118976A (nl) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190297A (ja) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | 有機金属気相結晶成長方法 |
JPH02199875A (ja) * | 1989-01-30 | 1990-08-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子およびその製造方法 |
JPH0318747A (ja) * | 1989-06-16 | 1991-01-28 | Nippon Philips Kk | 格子定数比測定方法及び測定装置 |
JPH03103393A (ja) * | 1989-09-18 | 1991-04-30 | Ulvac Japan Ltd | 真空成膜中の膜表面の元素組成分析方法、及び真空成膜方法 |
JP2012101977A (ja) * | 2010-11-10 | 2012-05-31 | Hitachi Cable Ltd | 窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法 |
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1974
- 1974-03-01 JP JP2455774A patent/JPS50118976A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190297A (ja) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | 有機金属気相結晶成長方法 |
JPH02199875A (ja) * | 1989-01-30 | 1990-08-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子およびその製造方法 |
JPH0318747A (ja) * | 1989-06-16 | 1991-01-28 | Nippon Philips Kk | 格子定数比測定方法及び測定装置 |
JPH03103393A (ja) * | 1989-09-18 | 1991-04-30 | Ulvac Japan Ltd | 真空成膜中の膜表面の元素組成分析方法、及び真空成膜方法 |
JP2012101977A (ja) * | 2010-11-10 | 2012-05-31 | Hitachi Cable Ltd | 窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法 |