JPS50118976A - - Google Patents

Info

Publication number
JPS50118976A
JPS50118976A JP2455774A JP2455774A JPS50118976A JP S50118976 A JPS50118976 A JP S50118976A JP 2455774 A JP2455774 A JP 2455774A JP 2455774 A JP2455774 A JP 2455774A JP S50118976 A JPS50118976 A JP S50118976A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2455774A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2455774A priority Critical patent/JPS50118976A/ja
Publication of JPS50118976A publication Critical patent/JPS50118976A/ja
Pending legal-status Critical Current

Links

JP2455774A 1974-03-01 1974-03-01 Pending JPS50118976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2455774A JPS50118976A (en) 1974-03-01 1974-03-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2455774A JPS50118976A (en) 1974-03-01 1974-03-01

Publications (1)

Publication Number Publication Date
JPS50118976A true JPS50118976A (en) 1975-09-18

Family

ID=12141449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2455774A Pending JPS50118976A (en) 1974-03-01 1974-03-01

Country Status (1)

Country Link
JP (1) JPS50118976A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190297A (en) * 1983-04-12 1984-10-29 Agency Of Ind Science & Technol Crystal growth in vapor of organometallic compound
JPH02199875A (en) * 1989-01-30 1990-08-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element and manufacture thereof
JPH0318747A (en) * 1989-06-16 1991-01-28 Nippon Philips Kk Method and device for measuring lattice constnat ratio
JPH03103393A (en) * 1989-09-18 1991-04-30 Ulvac Japan Ltd Vacuum film-forming device
JP2012101977A (en) * 2010-11-10 2012-05-31 Hitachi Cable Ltd Method for manufacturing nitride semiconductor substrate, and method for manufacturing nitride semiconductor self-standing substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190297A (en) * 1983-04-12 1984-10-29 Agency Of Ind Science & Technol Crystal growth in vapor of organometallic compound
JPH02199875A (en) * 1989-01-30 1990-08-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element and manufacture thereof
JPH0318747A (en) * 1989-06-16 1991-01-28 Nippon Philips Kk Method and device for measuring lattice constnat ratio
JPH03103393A (en) * 1989-09-18 1991-04-30 Ulvac Japan Ltd Vacuum film-forming device
JP2012101977A (en) * 2010-11-10 2012-05-31 Hitachi Cable Ltd Method for manufacturing nitride semiconductor substrate, and method for manufacturing nitride semiconductor self-standing substrate

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