JPS50118976A - - Google Patents
Info
- Publication number
- JPS50118976A JPS50118976A JP2455774A JP2455774A JPS50118976A JP S50118976 A JPS50118976 A JP S50118976A JP 2455774 A JP2455774 A JP 2455774A JP 2455774 A JP2455774 A JP 2455774A JP S50118976 A JPS50118976 A JP S50118976A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455774A JPS50118976A (en) | 1974-03-01 | 1974-03-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455774A JPS50118976A (en) | 1974-03-01 | 1974-03-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50118976A true JPS50118976A (en) | 1975-09-18 |
Family
ID=12141449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2455774A Pending JPS50118976A (en) | 1974-03-01 | 1974-03-01 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50118976A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190297A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Crystal growth in vapor of organometallic compound |
JPH02199875A (en) * | 1989-01-30 | 1990-08-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element and manufacture thereof |
JPH0318747A (en) * | 1989-06-16 | 1991-01-28 | Nippon Philips Kk | Method and device for measuring lattice constnat ratio |
JPH03103393A (en) * | 1989-09-18 | 1991-04-30 | Ulvac Japan Ltd | Vacuum film-forming device |
JP2012101977A (en) * | 2010-11-10 | 2012-05-31 | Hitachi Cable Ltd | Method for manufacturing nitride semiconductor substrate, and method for manufacturing nitride semiconductor self-standing substrate |
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1974
- 1974-03-01 JP JP2455774A patent/JPS50118976A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190297A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Crystal growth in vapor of organometallic compound |
JPH02199875A (en) * | 1989-01-30 | 1990-08-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element and manufacture thereof |
JPH0318747A (en) * | 1989-06-16 | 1991-01-28 | Nippon Philips Kk | Method and device for measuring lattice constnat ratio |
JPH03103393A (en) * | 1989-09-18 | 1991-04-30 | Ulvac Japan Ltd | Vacuum film-forming device |
JP2012101977A (en) * | 2010-11-10 | 2012-05-31 | Hitachi Cable Ltd | Method for manufacturing nitride semiconductor substrate, and method for manufacturing nitride semiconductor self-standing substrate |