JPS50118635A - - Google Patents

Info

Publication number
JPS50118635A
JPS50118635A JP49149041A JP14904174A JPS50118635A JP S50118635 A JPS50118635 A JP S50118635A JP 49149041 A JP49149041 A JP 49149041A JP 14904174 A JP14904174 A JP 14904174A JP S50118635 A JPS50118635 A JP S50118635A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49149041A
Other versions
JPS5744993B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50118635A publication Critical patent/JPS50118635A/ja
Publication of JPS5744993B2 publication Critical patent/JPS5744993B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP49149041A 1973-12-27 1974-12-27 Expired JPS5744993B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT32159/73A IT1002272B (it) 1973-12-27 1973-12-27 Sistema di ricarica in memoria a semiconduttori

Publications (2)

Publication Number Publication Date
JPS50118635A true JPS50118635A (ja) 1975-09-17
JPS5744993B2 JPS5744993B2 (ja) 1982-09-25

Family

ID=11234950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49149041A Expired JPS5744993B2 (ja) 1973-12-27 1974-12-27

Country Status (4)

Country Link
US (1) US4133051A (ja)
JP (1) JPS5744993B2 (ja)
FR (1) FR2272465B1 (ja)
IT (1) IT1002272B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414136U (ja) * 1977-06-30 1979-01-30
JPS61126691A (ja) * 1984-11-24 1986-06-14 Fujitsu Ltd メモリのリフレツシユ回路

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249247A (en) * 1979-01-08 1981-02-03 Ncr Corporation Refresh system for dynamic RAM memory
US4317169A (en) * 1979-02-14 1982-02-23 Honeywell Information Systems Inc. Data processing system having centralized memory refresh
JPS55132593A (en) * 1979-04-02 1980-10-15 Fujitsu Ltd Refresh control method for memory unit
FR2474227A1 (fr) * 1980-01-17 1981-07-24 Cii Honeywell Bull Procede de rafraichissement pour banc de memoire a circuit " mos " et sequenceur correspondant
DE3009872C2 (de) * 1980-03-14 1984-05-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Regenerieren von in einem dynamischen MOS-Speicher gespeicherten Daten unter Berücksichtigung von Schreib- und Lesezyklen und Schaltungsanordnung zur Durchführung des Verfahrens
DE3133838C2 (de) * 1981-08-27 1986-11-13 Otto 7750 Konstanz Müller Schaltungsanordnung zur Übergabe des Refresh-Signals an einem Halbleiterspeicher
US4866645A (en) * 1987-12-23 1989-09-12 North American Philips Corporation Neural network with dynamic refresh capability
TWI676171B (zh) * 2018-09-18 2019-11-01 華邦電子股份有限公司 記憶體裝置及其中斷處理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4878839A (ja) * 1971-12-29 1973-10-23
JPS49132943A (ja) * 1973-04-25 1974-12-20

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3790961A (en) * 1972-06-09 1974-02-05 Advanced Memory Syst Inc Random access dynamic semiconductor memory system
US3811117A (en) * 1972-10-19 1974-05-14 Ibm Time ordered memory system and operation
US3858184A (en) * 1973-01-22 1974-12-31 Monolithic Syst Corp Automatic non-interrupting refresh technique
US3858185A (en) * 1973-07-18 1974-12-31 Intel Corp An mos dynamic memory array & refreshing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4878839A (ja) * 1971-12-29 1973-10-23
JPS49132943A (ja) * 1973-04-25 1974-12-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414136U (ja) * 1977-06-30 1979-01-30
JPS587520Y2 (ja) * 1977-06-30 1983-02-09 富士通株式会社 リフレッシュ形記憶装置
JPS61126691A (ja) * 1984-11-24 1986-06-14 Fujitsu Ltd メモリのリフレツシユ回路

Also Published As

Publication number Publication date
JPS5744993B2 (ja) 1982-09-25
FR2272465B1 (ja) 1980-07-18
FR2272465A1 (ja) 1975-12-19
US4133051A (en) 1979-01-02
IT1002272B (it) 1976-05-20

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