JPS5011676A - - Google Patents

Info

Publication number
JPS5011676A
JPS5011676A JP48060878A JP6087873A JPS5011676A JP S5011676 A JPS5011676 A JP S5011676A JP 48060878 A JP48060878 A JP 48060878A JP 6087873 A JP6087873 A JP 6087873A JP S5011676 A JPS5011676 A JP S5011676A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48060878A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48060878A priority Critical patent/JPS5011676A/ja
Publication of JPS5011676A publication Critical patent/JPS5011676A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP48060878A 1973-06-01 1973-06-01 Pending JPS5011676A (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48060878A JPS5011676A (enrdf_load_stackoverflow) 1973-06-01 1973-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48060878A JPS5011676A (enrdf_load_stackoverflow) 1973-06-01 1973-06-01

Publications (1)

Publication Number Publication Date
JPS5011676A true JPS5011676A (enrdf_load_stackoverflow) 1975-02-06

Family

ID=13155063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48060878A Pending JPS5011676A (enrdf_load_stackoverflow) 1973-06-01 1973-06-01

Country Status (1)

Country Link
JP (1) JPS5011676A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154967A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electronic device
JPS5533836U (enrdf_load_stackoverflow) * 1978-08-25 1980-03-04
JPS57148370A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device
WO1984004853A1 (en) * 1983-05-26 1984-12-06 Sony Corp Method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154967A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electronic device
JPS5533836U (enrdf_load_stackoverflow) * 1978-08-25 1980-03-04
JPS57148370A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device
WO1984004853A1 (en) * 1983-05-26 1984-12-06 Sony Corp Method of manufacturing semiconductor device
US4591398A (en) * 1983-05-26 1986-05-27 Sony Corporation Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking

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