JPS50109896A - - Google Patents
Info
- Publication number
- JPS50109896A JPS50109896A JP1376774A JP1376774A JPS50109896A JP S50109896 A JPS50109896 A JP S50109896A JP 1376774 A JP1376774 A JP 1376774A JP 1376774 A JP1376774 A JP 1376774A JP S50109896 A JPS50109896 A JP S50109896A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49013767A JPS5749520B2 (https=) | 1974-02-04 | 1974-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49013767A JPS5749520B2 (https=) | 1974-02-04 | 1974-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50109896A true JPS50109896A (https=) | 1975-08-29 |
| JPS5749520B2 JPS5749520B2 (https=) | 1982-10-22 |
Family
ID=11842391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49013767A Expired JPS5749520B2 (https=) | 1974-02-04 | 1974-02-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749520B2 (https=) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011042566A (ja) * | 2008-06-04 | 2011-03-03 | Sixpoint Materials Inc | Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法 |
| US8557043B2 (en) | 2008-06-12 | 2013-10-15 | Sixpoint Materials, Inc. | Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| US8728234B2 (en) | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
| US8764903B2 (en) | 2009-05-05 | 2014-07-01 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
| US8852341B2 (en) | 2008-11-24 | 2014-10-07 | Sixpoint Materials, Inc. | Methods for producing GaN nutrient for ammonothermal growth |
| JP2015164884A (ja) * | 2014-03-03 | 2015-09-17 | 京セラクリスタルデバイス株式会社 | 人工水晶の製造方法及び製造装置 |
| US9803293B2 (en) | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
| WO2025169662A1 (ja) * | 2024-02-05 | 2025-08-14 | 株式会社日本製鋼所 | 人工水晶の製造方法、人工水晶製造装置および人工水晶 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4719970B2 (ja) * | 2000-11-01 | 2011-07-06 | 株式会社大真空 | 人工水晶育成用制御板及び当該制御板を用いた人工水晶の製造方法及び当該製造方法による人工水晶 |
| JP5033386B2 (ja) * | 2006-09-29 | 2012-09-26 | 日本電波工業株式会社 | 人工水晶の製造方法及び人工水晶 |
| JP2013095643A (ja) * | 2011-11-02 | 2013-05-20 | Seiko Epson Corp | 結晶の製造方法、結晶の製造装置および結晶育成用治具 |
| JP5516650B2 (ja) * | 2012-06-04 | 2014-06-11 | 日本電波工業株式会社 | 人工水晶の製造方法及び人工水晶 |
| JP6290018B2 (ja) * | 2014-07-01 | 2018-03-07 | 京セラ株式会社 | 人工水晶の育成冶具及び育成方法 |
-
1974
- 1974-02-04 JP JP49013767A patent/JPS5749520B2/ja not_active Expired
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10087548B2 (en) | 2006-04-07 | 2018-10-02 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
| US9803293B2 (en) | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
| JP2011042566A (ja) * | 2008-06-04 | 2011-03-03 | Sixpoint Materials Inc | Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法 |
| JP2011513180A (ja) * | 2008-06-04 | 2011-04-28 | シックスポイント マテリアルズ， インコーポレイテッド | Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法 |
| US8728234B2 (en) | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
| US9985102B2 (en) | 2008-06-04 | 2018-05-29 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
| US8557043B2 (en) | 2008-06-12 | 2013-10-15 | Sixpoint Materials, Inc. | Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| US8585822B2 (en) | 2008-06-12 | 2013-11-19 | Sixpoint Materials, Inc. | Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| US8852341B2 (en) | 2008-11-24 | 2014-10-07 | Sixpoint Materials, Inc. | Methods for producing GaN nutrient for ammonothermal growth |
| US8764903B2 (en) | 2009-05-05 | 2014-07-01 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
| JP2015164884A (ja) * | 2014-03-03 | 2015-09-17 | 京セラクリスタルデバイス株式会社 | 人工水晶の製造方法及び製造装置 |
| WO2025169662A1 (ja) * | 2024-02-05 | 2025-08-14 | 株式会社日本製鋼所 | 人工水晶の製造方法、人工水晶製造装置および人工水晶 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5749520B2 (https=) | 1982-10-22 |