JPS50109896A - - Google Patents

Info

Publication number
JPS50109896A
JPS50109896A JP1376774A JP1376774A JPS50109896A JP S50109896 A JPS50109896 A JP S50109896A JP 1376774 A JP1376774 A JP 1376774A JP 1376774 A JP1376774 A JP 1376774A JP S50109896 A JPS50109896 A JP S50109896A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1376774A
Other versions
JPS5749520B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49013767A priority Critical patent/JPS5749520B2/ja
Publication of JPS50109896A publication Critical patent/JPS50109896A/ja
Publication of JPS5749520B2 publication Critical patent/JPS5749520B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP49013767A 1974-02-04 1974-02-04 Expired JPS5749520B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49013767A JPS5749520B2 (ja) 1974-02-04 1974-02-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49013767A JPS5749520B2 (ja) 1974-02-04 1974-02-04

Publications (2)

Publication Number Publication Date
JPS50109896A true JPS50109896A (ja) 1975-08-29
JPS5749520B2 JPS5749520B2 (ja) 1982-10-22

Family

ID=11842391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49013767A Expired JPS5749520B2 (ja) 1974-02-04 1974-02-04

Country Status (1)

Country Link
JP (1) JPS5749520B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011042566A (ja) * 2008-06-04 2011-03-03 Sixpoint Materials Inc Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
US8557043B2 (en) 2008-06-12 2013-10-15 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US8728234B2 (en) 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8852341B2 (en) 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
JP2015164884A (ja) * 2014-03-03 2015-09-17 京セラクリスタルデバイス株式会社 人工水晶の製造方法及び製造装置
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4719970B2 (ja) * 2000-11-01 2011-07-06 株式会社大真空 人工水晶育成用制御板及び当該制御板を用いた人工水晶の製造方法及び当該製造方法による人工水晶
JP5033386B2 (ja) * 2006-09-29 2012-09-26 日本電波工業株式会社 人工水晶の製造方法及び人工水晶
JP2013095643A (ja) * 2011-11-02 2013-05-20 Seiko Epson Corp 結晶の製造方法、結晶の製造装置および結晶育成用治具
JP5516650B2 (ja) * 2012-06-04 2014-06-11 日本電波工業株式会社 人工水晶の製造方法及び人工水晶
JP6290018B2 (ja) * 2014-07-01 2018-03-07 京セラ株式会社 人工水晶の育成冶具及び育成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10087548B2 (en) 2006-04-07 2018-10-02 Sixpoint Materials, Inc. High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
JP2011042566A (ja) * 2008-06-04 2011-03-03 Sixpoint Materials Inc Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
JP2011513180A (ja) * 2008-06-04 2011-04-28 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
US8728234B2 (en) 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US9985102B2 (en) 2008-06-04 2018-05-29 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US8557043B2 (en) 2008-06-12 2013-10-15 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US8585822B2 (en) 2008-06-12 2013-11-19 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US8852341B2 (en) 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
JP2015164884A (ja) * 2014-03-03 2015-09-17 京セラクリスタルデバイス株式会社 人工水晶の製造方法及び製造装置

Also Published As

Publication number Publication date
JPS5749520B2 (ja) 1982-10-22

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