JPS50109684A - - Google Patents

Info

Publication number
JPS50109684A
JPS50109684A JP1038475A JP1038475A JPS50109684A JP S50109684 A JPS50109684 A JP S50109684A JP 1038475 A JP1038475 A JP 1038475A JP 1038475 A JP1038475 A JP 1038475A JP S50109684 A JPS50109684 A JP S50109684A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1038475A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50109684A publication Critical patent/JPS50109684A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/355Monostable circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1038475A 1974-01-24 1975-01-24 Pending JPS50109684A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402408A FR2259436B1 (cs) 1974-01-24 1974-01-24

Publications (1)

Publication Number Publication Date
JPS50109684A true JPS50109684A (cs) 1975-08-28

Family

ID=9133936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1038475A Pending JPS50109684A (cs) 1974-01-24 1975-01-24

Country Status (4)

Country Link
JP (1) JPS50109684A (cs)
DE (1) DE2502689A1 (cs)
FR (1) FR2259436B1 (cs)
GB (1) GB1486733A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522831A (en) * 1978-08-04 1980-02-18 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
JPS56143028A (en) * 1980-03-17 1981-11-07 Philips Nv Current stabilizer
JPH0798982A (ja) * 1993-05-25 1995-04-11 Nec Corp 基板バイアス回路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2826624C2 (de) * 1978-06-19 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte IGFET-Konstantstromquelle
US4321484A (en) * 1979-02-28 1982-03-23 International Business Machines Corporation Field effect transistor multivibrator
DE3027456C2 (de) * 1980-07-19 1984-11-15 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET
DE3027455C2 (de) * 1980-07-19 1984-07-12 Telefunken electronic GmbH, 7100 Heilbronn Integrierte astabile Kippstufe
DE3038197A1 (de) * 1980-10-09 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung zur elektronischen stabilisierung des betriebsstromes eines mindestens eine gateelektrode aufweisenden betriebsfeldeffekttransistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522831A (en) * 1978-08-04 1980-02-18 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
JPH0327934B2 (cs) * 1980-02-28 1991-04-17 Seiko Instr & Electronics
JPS56143028A (en) * 1980-03-17 1981-11-07 Philips Nv Current stabilizer
JPH0410093B2 (cs) * 1980-03-17 1992-02-24
JPH0798982A (ja) * 1993-05-25 1995-04-11 Nec Corp 基板バイアス回路

Also Published As

Publication number Publication date
FR2259436A1 (cs) 1975-08-22
FR2259436B1 (cs) 1978-01-13
GB1486733A (en) 1977-09-21
DE2502689A1 (de) 1975-07-31

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