JPS50105081A - - Google Patents
Info
- Publication number
- JPS50105081A JPS50105081A JP769475A JP769475A JPS50105081A JP S50105081 A JPS50105081 A JP S50105081A JP 769475 A JP769475 A JP 769475A JP 769475 A JP769475 A JP 769475A JP S50105081 A JPS50105081 A JP S50105081A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43446974A | 1974-01-18 | 1974-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50105081A true JPS50105081A (cs) | 1975-08-19 |
JPS5845196B2 JPS5845196B2 (ja) | 1983-10-07 |
Family
ID=23724371
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50007694A Expired JPS5845196B2 (ja) | 1974-01-18 | 1975-01-17 | コウガクデンソウソウチ |
JP9686683A Pending JPS58218188A (ja) | 1974-01-18 | 1983-05-31 | 光学伝送装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9686683A Pending JPS58218188A (ja) | 1974-01-18 | 1983-05-31 | 光学伝送装置 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JPS5845196B2 (cs) |
DE (1) | DE2501782A1 (cs) |
FR (1) | FR2258724A1 (cs) |
SU (1) | SU722509A3 (cs) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114552371A (zh) * | 2022-02-23 | 2022-05-27 | 安徽格恩半导体有限公司 | 一种GaN基的激光二极管结构及制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2337449A1 (fr) * | 1975-12-29 | 1977-07-29 | Tokyo Inst Tech | Circuit optique integre du type a guide d'ondes a structures multiples heterogenes et son procede de fabrication |
JPS61166193A (ja) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 光集積回路 |
CN110023802B (zh) * | 2016-11-10 | 2021-10-08 | 乔普西斯责任有限公司 | 光子谐振电机 |
DE102021004609A1 (de) | 2021-09-11 | 2023-03-16 | Eques Consulting GmbH | Vorrichtung und damit durchführbares Verfahren zur non-invasiven Konzentrationsbestimmung von Komponenten im menschlichen Blutkreislauf und Verwendung des Verfahrens. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4879588A (cs) * | 1972-01-25 | 1973-10-25 |
-
1975
- 1975-01-17 JP JP50007694A patent/JPS5845196B2/ja not_active Expired
- 1975-01-17 SU SU752103057A patent/SU722509A3/ru active
- 1975-01-17 DE DE19752501782 patent/DE2501782A1/de not_active Withdrawn
- 1975-01-20 FR FR7501674A patent/FR2258724A1/fr active Granted
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1983
- 1983-05-31 JP JP9686683A patent/JPS58218188A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4879588A (cs) * | 1972-01-25 | 1973-10-25 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114552371A (zh) * | 2022-02-23 | 2022-05-27 | 安徽格恩半导体有限公司 | 一种GaN基的激光二极管结构及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS58218188A (ja) | 1983-12-19 |
FR2258724B1 (cs) | 1981-09-25 |
FR2258724A1 (en) | 1975-08-18 |
SU722509A3 (ru) | 1980-03-15 |
JPS5845196B2 (ja) | 1983-10-07 |
DE2501782A1 (de) | 1975-10-30 |