JPS50102274A - - Google Patents
Info
- Publication number
- JPS50102274A JPS50102274A JP50001989A JP198975A JPS50102274A JP S50102274 A JPS50102274 A JP S50102274A JP 50001989 A JP50001989 A JP 50001989A JP 198975 A JP198975 A JP 198975A JP S50102274 A JPS50102274 A JP S50102274A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2400208A DE2400208A1 (de) | 1974-01-03 | 1974-01-03 | Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50102274A true JPS50102274A (en, 2012) | 1975-08-13 |
Family
ID=5904100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50001989A Pending JPS50102274A (en, 2012) | 1974-01-03 | 1974-12-27 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3986197A (en, 2012) |
| JP (1) | JPS50102274A (en, 2012) |
| CA (1) | CA1061903A (en, 2012) |
| DE (1) | DE2400208A1 (en, 2012) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028719A (en) * | 1976-03-11 | 1977-06-07 | Northrop Corporation | Array type charge extraction device for infra-red detection |
| US4169231A (en) * | 1977-09-22 | 1979-09-25 | Hughes Aircraft Company | Buried channel to surface channel CCD charge transfer structure |
| DE2743245A1 (de) * | 1977-09-26 | 1979-04-05 | Siemens Ag | Ladungsgekoppeltes bauelement |
| US4285000A (en) * | 1979-03-12 | 1981-08-18 | Rockwell International Corporation | Buried channel charge coupled device with semi-insulating substrate |
| DE3581793D1 (de) * | 1984-12-06 | 1991-03-28 | Toshiba Kawasaki Kk | Ladungsverschiebeanordnung. |
| JPH0644578B2 (ja) * | 1984-12-21 | 1994-06-08 | 三菱電機株式会社 | 電荷転送素子 |
| US6852575B2 (en) * | 2001-07-05 | 2005-02-08 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
| US6933566B2 (en) * | 2001-07-05 | 2005-08-23 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853682A (en, 2012) * | 1971-10-27 | 1973-07-27 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| US3819959A (en) * | 1970-12-04 | 1974-06-25 | Ibm | Two phase charge-coupled semiconductor device |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| US3656011A (en) * | 1971-02-02 | 1972-04-11 | Rca Corp | Charge coupled device |
| US3863065A (en) * | 1972-10-02 | 1975-01-28 | Rca Corp | Dynamic control of blooming in charge coupled, image-sensing arrays |
| US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
-
1974
- 1974-01-03 DE DE2400208A patent/DE2400208A1/de not_active Ceased
- 1974-12-27 JP JP50001989A patent/JPS50102274A/ja active Pending
-
1975
- 1975-01-02 CA CA217,263A patent/CA1061903A/en not_active Expired
- 1975-01-03 US US05/538,383 patent/US3986197A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853682A (en, 2012) * | 1971-10-27 | 1973-07-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1061903A (en) | 1979-09-04 |
| US3986197A (en) | 1976-10-12 |
| DE2400208A1 (de) | 1975-07-17 |