JPS50102273A - - Google Patents
Info
- Publication number
- JPS50102273A JPS50102273A JP49149085A JP14908574A JPS50102273A JP S50102273 A JPS50102273 A JP S50102273A JP 49149085 A JP49149085 A JP 49149085A JP 14908574 A JP14908574 A JP 14908574A JP S50102273 A JPS50102273 A JP S50102273A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US430025A US3868274A (en) | 1974-01-02 | 1974-01-02 | Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50102273A true JPS50102273A (US07847105-20101207-C00016.png) | 1975-08-13 |
| JPS5524704B2 JPS5524704B2 (US07847105-20101207-C00016.png) | 1980-07-01 |
Family
ID=23705767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14908574A Expired JPS5524704B2 (US07847105-20101207-C00016.png) | 1974-01-02 | 1974-12-27 |
Country Status (5)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3912545A (en) * | 1974-05-13 | 1975-10-14 | Motorola Inc | Process and product for making a single supply N-channel silicon gate device |
| US4115796A (en) * | 1974-07-05 | 1978-09-19 | Sharp Kabushiki Kaisha | Complementary-MOS integrated semiconductor device |
| US3975648A (en) * | 1975-06-16 | 1976-08-17 | Hewlett-Packard Company | Flat-band voltage reference |
| JPS5226177A (en) * | 1975-08-25 | 1977-02-26 | Toshiba Corp | Semi-conductor unit |
| US4052229A (en) * | 1976-06-25 | 1977-10-04 | Intel Corporation | Process for preparing a substrate for mos devices of different thresholds |
| US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
| US5434438A (en) * | 1976-09-13 | 1995-07-18 | Texas Instruments Inc. | Random access memory cell with a capacitor |
| US5168075A (en) * | 1976-09-13 | 1992-12-01 | Texas Instruments Incorporated | Random access memory cell with implanted capacitor region |
| JPS544086A (en) * | 1977-06-10 | 1979-01-12 | Fujitsu Ltd | Memory circuit unit |
| JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
| US4135102A (en) * | 1977-07-18 | 1979-01-16 | Mostek Corporation | High performance inverter circuits |
| US4472871A (en) * | 1978-09-21 | 1984-09-25 | Mostek Corporation | Method of making a plurality of MOSFETs having different threshold voltages |
| US4212684A (en) * | 1978-11-20 | 1980-07-15 | Ncr Corporation | CISFET Processing including simultaneous doping of silicon components and FET channels |
| US4244752A (en) * | 1979-03-06 | 1981-01-13 | Burroughs Corporation | Single mask method of fabricating complementary integrated circuits |
| US4218267A (en) * | 1979-04-23 | 1980-08-19 | Rockwell International Corporation | Microelectronic fabrication method minimizing threshold voltage variation |
| CA1151295A (en) * | 1979-07-31 | 1983-08-02 | Alan Aitken | Dual resistivity mos devices and method of fabrication |
| NL8303441A (nl) * | 1983-10-07 | 1985-05-01 | Philips Nv | Geintegreerde schakeling met komplementaire veldeffekttransistors. |
| US4618815A (en) * | 1985-02-11 | 1986-10-21 | At&T Bell Laboratories | Mixed threshold current mirror |
| JPH0766946B2 (ja) * | 1989-03-31 | 1995-07-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US5675165A (en) * | 1994-08-02 | 1997-10-07 | Lien; Chuen-Der | Stable SRAM cell using low backgate biased threshold voltage select transistors |
| JP3185862B2 (ja) * | 1997-09-10 | 2001-07-11 | 日本電気株式会社 | マスク型半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039881A (US07847105-20101207-C00016.png) * | 1973-07-09 | 1975-04-12 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2787564A (en) * | 1954-10-28 | 1957-04-02 | Bell Telephone Labor Inc | Forming semiconductive devices by ionic bombardment |
| US3575745A (en) * | 1969-04-02 | 1971-04-20 | Bryan H Hill | Integrated circuit fabrication |
| US3793093A (en) * | 1973-01-12 | 1974-02-19 | Handotai Kenkyu Shinkokai | Method for producing a semiconductor device having a very small deviation in lattice constant |
-
1974
- 1974-01-02 US US430025A patent/US3868274A/en not_active Expired - Lifetime
- 1974-12-23 GB GB55630/74A patent/GB1489390A/en not_active Expired
- 1974-12-23 CA CA216,738A patent/CA1011005A/en not_active Expired
- 1974-12-27 JP JP14908574A patent/JPS5524704B2/ja not_active Expired
-
1975
- 1975-01-02 DE DE19752500047 patent/DE2500047A1/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039881A (US07847105-20101207-C00016.png) * | 1973-07-09 | 1975-04-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1489390A (en) | 1977-10-19 |
| US3868274A (en) | 1975-02-25 |
| JPS5524704B2 (US07847105-20101207-C00016.png) | 1980-07-01 |
| DE2500047A1 (de) | 1975-07-10 |
| US3868274B1 (US07847105-20101207-C00016.png) | 1988-07-26 |
| CA1011005A (en) | 1977-05-24 |
