JPS50100971A - - Google Patents

Info

Publication number
JPS50100971A
JPS50100971A JP49124501A JP12450174A JPS50100971A JP S50100971 A JPS50100971 A JP S50100971A JP 49124501 A JP49124501 A JP 49124501A JP 12450174 A JP12450174 A JP 12450174A JP S50100971 A JPS50100971 A JP S50100971A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49124501A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50100971A publication Critical patent/JPS50100971A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
JP49124501A 1973-10-30 1974-10-30 Pending JPS50100971A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US411150A US3901736A (en) 1973-10-30 1973-10-30 Method of making deep diode devices

Publications (1)

Publication Number Publication Date
JPS50100971A true JPS50100971A (ja) 1975-08-11

Family

ID=23627780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49124501A Pending JPS50100971A (ja) 1973-10-30 1974-10-30

Country Status (7)

Country Link
US (1) US3901736A (ja)
JP (1) JPS50100971A (ja)
CA (1) CA1020291A (ja)
DE (1) DE2450907A1 (ja)
FR (1) FR2249441A1 (ja)
GB (1) GB1493815A (ja)
SE (1) SE396506B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56500989A (ja) * 1979-07-31 1981-07-16

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032364A (en) * 1975-02-28 1977-06-28 General Electric Company Deep diode silicon controlled rectifier
US4001047A (en) * 1975-05-19 1977-01-04 General Electric Company Temperature gradient zone melting utilizing infrared radiation
US4042448A (en) * 1975-11-26 1977-08-16 General Electric Company Post TGZM surface etch
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US4012236A (en) * 1975-12-31 1977-03-15 General Electric Company Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
US4033786A (en) * 1976-08-30 1977-07-05 General Electric Company Temperature gradient zone melting utilizing selective radiation coatings
US4076559A (en) * 1977-03-18 1978-02-28 General Electric Company Temperature gradient zone melting through an oxide layer
CH632356A5 (de) * 1977-12-15 1982-09-30 Bbc Brown Boveri & Cie Verfahren zur herstellung von metallmustern auf siliziumscheiben fuer die thermomigration.
US4170491A (en) * 1978-12-07 1979-10-09 General Electric Company Near-surface thermal gradient enhancement with opaque coatings
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4168991A (en) * 1978-12-22 1979-09-25 General Electric Company Method for making a deep diode magnetoresistor
US4570173A (en) * 1981-05-26 1986-02-11 General Electric Company High-aspect-ratio hollow diffused regions in a semiconductor body
US4720308A (en) * 1984-01-03 1988-01-19 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby
US4595428A (en) * 1984-01-03 1986-06-17 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body
DE10302653A1 (de) * 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration
DE102004041192A1 (de) * 2004-08-25 2006-03-02 Infineon Technologies Ag Verfahren zum Ausbilden einer Isolation
US20060128147A1 (en) * 2004-12-09 2006-06-15 Honeywell International Inc. Method of fabricating electrically conducting vias in a silicon wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
US3575823A (en) * 1968-07-26 1971-04-20 Bell Telephone Labor Inc Method of making a silicon target for image storage tube
JPS4919017B1 (ja) * 1968-09-30 1974-05-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56500989A (ja) * 1979-07-31 1981-07-16

Also Published As

Publication number Publication date
SE7413673L (ja) 1975-05-02
SE396506B (sv) 1977-09-19
GB1493815A (en) 1977-11-30
DE2450907A1 (de) 1975-05-07
US3901736A (en) 1975-08-26
CA1020291A (en) 1977-11-01
FR2249441A1 (ja) 1975-05-23

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