JPS4994582A - - Google Patents

Info

Publication number
JPS4994582A
JPS4994582A JP48006644A JP664473A JPS4994582A JP S4994582 A JPS4994582 A JP S4994582A JP 48006644 A JP48006644 A JP 48006644A JP 664473 A JP664473 A JP 664473A JP S4994582 A JPS4994582 A JP S4994582A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48006644A
Other languages
Japanese (ja)
Other versions
JPS529438B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48006644A priority Critical patent/JPS529438B2/ja
Priority to US05/432,516 priority patent/US3951729A/en
Publication of JPS4994582A publication Critical patent/JPS4994582A/ja
Publication of JPS529438B2 publication Critical patent/JPS529438B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP48006644A 1973-01-16 1973-01-16 Expired JPS529438B2 (en:Method)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP48006644A JPS529438B2 (en:Method) 1973-01-16 1973-01-16
US05/432,516 US3951729A (en) 1973-01-16 1974-01-11 Method for producing single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48006644A JPS529438B2 (en:Method) 1973-01-16 1973-01-16

Publications (2)

Publication Number Publication Date
JPS4994582A true JPS4994582A (en:Method) 1974-09-07
JPS529438B2 JPS529438B2 (en:Method) 1977-03-16

Family

ID=11644066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48006644A Expired JPS529438B2 (en:Method) 1973-01-16 1973-01-16

Country Status (2)

Country Link
US (1) US3951729A (en:Method)
JP (1) JPS529438B2 (en:Method)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435899A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Production of rare earth element gallium garnet single crystal
JPS55109298A (en) * 1979-02-14 1980-08-22 Hitachi Metals Ltd Garnet single crystal for ornament
US4973518A (en) * 1987-04-09 1990-11-27 Mitsubishi Kinzoku Kabushiki Kaisha Monocrystal rod pulled from a melt
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
US5611857A (en) * 1993-10-18 1997-03-18 Sumitomo Sitix Corporation Apparatus for producing single crystals
JP2017109878A (ja) * 2015-12-14 2017-06-22 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法
JP2017186189A (ja) * 2016-04-04 2017-10-12 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4202930A (en) * 1978-02-10 1980-05-13 Allied Chemical Corporation Lanthanum indium gallium garnets
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS62256793A (ja) * 1986-05-01 1987-11-09 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の引上方法
US5302559A (en) * 1989-02-17 1994-04-12 U.S. Philips Corporation Mixed crystals of doped rare earth gallium garnet
US5035769A (en) * 1989-10-04 1991-07-30 The United States Of America As Represented By The United States Department Of Energy Nondestructive method for chemically machining crucibles or molds from their enclosed ingots and castings
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
KR100571570B1 (ko) * 2000-02-15 2006-04-14 주식회사 실트론 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법
KR100375516B1 (ko) * 2000-09-22 2003-03-10 주식회사 실트론 무결함 실리콘 단결정 성장 방법
GB0611926D0 (en) * 2006-06-16 2006-07-26 Rolls Royce Plc Welding of single crystal alloys
WO2025217169A1 (en) * 2024-04-08 2025-10-16 Luxium Solutions, Llc Apparatus and method for growth of gadolinium gallium garnet crystal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435899A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Production of rare earth element gallium garnet single crystal
JPS55109298A (en) * 1979-02-14 1980-08-22 Hitachi Metals Ltd Garnet single crystal for ornament
US4973518A (en) * 1987-04-09 1990-11-27 Mitsubishi Kinzoku Kabushiki Kaisha Monocrystal rod pulled from a melt
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
US5611857A (en) * 1993-10-18 1997-03-18 Sumitomo Sitix Corporation Apparatus for producing single crystals
JP2017109878A (ja) * 2015-12-14 2017-06-22 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法
JP2017186189A (ja) * 2016-04-04 2017-10-12 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法

Also Published As

Publication number Publication date
US3951729A (en) 1976-04-20
JPS529438B2 (en:Method) 1977-03-16

Similar Documents

Publication Publication Date Title
AR201758A1 (en:Method)
AU476761B2 (en:Method)
AU465372B2 (en:Method)
AR201235Q (en:Method)
AR201231Q (en:Method)
AU474593B2 (en:Method)
AU474511B2 (en:Method)
AU474838B2 (en:Method)
AU465453B2 (en:Method)
AU471343B2 (en:Method)
AU465434B2 (en:Method)
AU450229B2 (en:Method)
AU476714B2 (en:Method)
AR201229Q (en:Method)
AU466283B2 (en:Method)
AR199451A1 (en:Method)
AU476696B2 (en:Method)
AU472848B2 (en:Method)
AU477823B2 (en:Method)
AU461342B2 (en:Method)
AU471461B2 (en:Method)
AR200256A1 (en:Method)
AU476873B1 (en:Method)
AR210729A1 (en:Method)
AU477824B2 (en:Method)