JPS499183A - - Google Patents

Info

Publication number
JPS499183A
JPS499183A JP47046629A JP4662972A JPS499183A JP S499183 A JPS499183 A JP S499183A JP 47046629 A JP47046629 A JP 47046629A JP 4662972 A JP4662972 A JP 4662972A JP S499183 A JPS499183 A JP S499183A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47046629A
Other versions
JPS5148152B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47046629A priority Critical patent/JPS5148152B2/ja
Priority to US05/356,949 priority patent/US3966881A/en
Priority to GB2159573A priority patent/GB1430480A/en
Priority to DE2323211A priority patent/DE2323211A1/de
Priority to CA170,965A priority patent/CA985603A/en
Publication of JPS499183A publication Critical patent/JPS499183A/ja
Publication of JPS5148152B2 publication Critical patent/JPS5148152B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP47046629A 1972-05-11 1972-05-11 Expired JPS5148152B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP47046629A JPS5148152B2 (ja) 1972-05-11 1972-05-11
US05/356,949 US3966881A (en) 1972-05-11 1973-05-03 Method of making a single crystal intermetallic compound semiconductor
GB2159573A GB1430480A (en) 1972-05-11 1973-05-07 Methods of making single crystal intermetallic compounds semi conductors
DE2323211A DE2323211A1 (de) 1972-05-11 1973-05-09 Verfahren zur herstellung einer intermetallischen einkristall-halbleiterverbindung
CA170,965A CA985603A (en) 1972-05-11 1973-05-10 Method of making a single crystal intermetallic compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47046629A JPS5148152B2 (ja) 1972-05-11 1972-05-11

Publications (2)

Publication Number Publication Date
JPS499183A true JPS499183A (ja) 1974-01-26
JPS5148152B2 JPS5148152B2 (ja) 1976-12-18

Family

ID=12752572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47046629A Expired JPS5148152B2 (ja) 1972-05-11 1972-05-11

Country Status (5)

Country Link
US (1) US3966881A (ja)
JP (1) JPS5148152B2 (ja)
CA (1) CA985603A (ja)
DE (1) DE2323211A1 (ja)
GB (1) GB1430480A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115769A (en) * 1975-02-12 1976-10-12 Philips Nv Seniconductor compound and method of producucing single crystal thereof
JPS52100973A (en) * 1975-09-02 1977-08-24 Licentia Gmbh Method and apparatus for making single crystal

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
JP3648703B2 (ja) * 2000-01-07 2005-05-18 株式会社日鉱マテリアルズ 化合物半導体単結晶の製造方法
TW201241249A (en) * 2011-04-12 2012-10-16 Dingten Ind Inc Single crystal growth method for vertical high temperature and high pressure group III-V compound
JP6061276B2 (ja) * 2014-08-29 2017-01-18 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 金属層間のはんだ接合の形成方法
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3694166A (en) * 1967-05-22 1972-09-26 Hughes Aircraft Co Crystal growth tube
US3582287A (en) * 1968-01-09 1971-06-01 Emil R Capita Seed pulling apparatus having diagonal feed and gas doping
JPS4820106B1 (ja) * 1968-03-08 1973-06-19
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
US3628998A (en) * 1969-09-23 1971-12-21 Ibm Method for growth of a mixed crystal with controlled composition
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115769A (en) * 1975-02-12 1976-10-12 Philips Nv Seniconductor compound and method of producucing single crystal thereof
JPS5412267B2 (ja) * 1975-02-12 1979-05-22
JPS52100973A (en) * 1975-09-02 1977-08-24 Licentia Gmbh Method and apparatus for making single crystal

Also Published As

Publication number Publication date
DE2323211A1 (de) 1973-11-22
JPS5148152B2 (ja) 1976-12-18
GB1430480A (en) 1976-03-31
CA985603A (en) 1976-03-16
US3966881A (en) 1976-06-29

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