JPS4991384A - - Google Patents

Info

Publication number
JPS4991384A
JPS4991384A JP48134910A JP13491073A JPS4991384A JP S4991384 A JPS4991384 A JP S4991384A JP 48134910 A JP48134910 A JP 48134910A JP 13491073 A JP13491073 A JP 13491073A JP S4991384 A JPS4991384 A JP S4991384A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48134910A
Other languages
Japanese (ja)
Other versions
JPS5342512B2 (it
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4991384A publication Critical patent/JPS4991384A/ja
Publication of JPS5342512B2 publication Critical patent/JPS5342512B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP13491073A 1972-12-22 1973-12-04 Expired JPS5342512B2 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1874772A CH557081A (de) 1972-12-22 1972-12-22 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.

Publications (2)

Publication Number Publication Date
JPS4991384A true JPS4991384A (it) 1974-08-31
JPS5342512B2 JPS5342512B2 (it) 1978-11-11

Family

ID=4435044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13491073A Expired JPS5342512B2 (it) 1972-12-22 1973-12-04

Country Status (7)

Country Link
JP (1) JPS5342512B2 (it)
CA (1) CA1012655A (it)
CH (1) CH557081A (it)
DE (1) DE2346569A1 (it)
FR (1) FR2211728A1 (it)
GB (1) GB1432659A (it)
IT (1) IT1001107B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000470A1 (fr) * 1984-06-20 1986-01-16 Poley W Leonhard Procede pour la fabrication d'elements electroniques
DE102005001460B4 (de) * 2005-01-12 2010-01-14 Qimonda Ag Speichervorrichtung und Herstellungsverfahren

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2053606A5 (en) * 1969-07-10 1971-04-16 Corning Glass Works Discontinuous thin film multi-stable resistor
JPS492950B1 (it) * 1969-08-21 1974-01-23

Also Published As

Publication number Publication date
FR2211728B1 (it) 1976-06-25
GB1432659A (en) 1976-04-22
DE2346569A1 (de) 1974-06-27
FR2211728A1 (en) 1974-07-19
JPS5342512B2 (it) 1978-11-11
IT1001107B (it) 1976-04-20
CH557081A (de) 1974-12-13
CA1012655A (en) 1977-06-21

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