JPS4991384A - - Google Patents

Info

Publication number
JPS4991384A
JPS4991384A JP48134910A JP13491073A JPS4991384A JP S4991384 A JPS4991384 A JP S4991384A JP 48134910 A JP48134910 A JP 48134910A JP 13491073 A JP13491073 A JP 13491073A JP S4991384 A JPS4991384 A JP S4991384A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48134910A
Other languages
Japanese (ja)
Other versions
JPS5342512B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4991384A publication Critical patent/JPS4991384A/ja
Publication of JPS5342512B2 publication Critical patent/JPS5342512B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP13491073A 1972-12-22 1973-12-04 Expired JPS5342512B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1874772A CH557081A (de) 1972-12-22 1972-12-22 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.

Publications (2)

Publication Number Publication Date
JPS4991384A true JPS4991384A (en:Method) 1974-08-31
JPS5342512B2 JPS5342512B2 (en:Method) 1978-11-11

Family

ID=4435044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13491073A Expired JPS5342512B2 (en:Method) 1972-12-22 1973-12-04

Country Status (7)

Country Link
JP (1) JPS5342512B2 (en:Method)
CA (1) CA1012655A (en:Method)
CH (1) CH557081A (en:Method)
DE (1) DE2346569A1 (en:Method)
FR (1) FR2211728A1 (en:Method)
GB (1) GB1432659A (en:Method)
IT (1) IT1001107B (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0215794A1 (de) * 1984-06-20 1987-04-01 POLEY, W. Leonhard Verfahren zum herstellen eines elektronischen bauelements
DE102005001460B4 (de) * 2005-01-12 2010-01-14 Qimonda Ag Speichervorrichtung und Herstellungsverfahren

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2053606A5 (en) * 1969-07-10 1971-04-16 Corning Glass Works Discontinuous thin film multi-stable resistor
JPS492950B1 (en:Method) * 1969-08-21 1974-01-23

Also Published As

Publication number Publication date
DE2346569A1 (de) 1974-06-27
FR2211728A1 (en) 1974-07-19
FR2211728B1 (en:Method) 1976-06-25
IT1001107B (it) 1976-04-20
CH557081A (de) 1974-12-13
CA1012655A (en) 1977-06-21
JPS5342512B2 (en:Method) 1978-11-11
GB1432659A (en) 1976-04-22

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