JPS4990886A - - Google Patents

Info

Publication number
JPS4990886A
JPS4990886A JP48001468A JP146873A JPS4990886A JP S4990886 A JPS4990886 A JP S4990886A JP 48001468 A JP48001468 A JP 48001468A JP 146873 A JP146873 A JP 146873A JP S4990886 A JPS4990886 A JP S4990886A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48001468A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48001468A priority Critical patent/JPS4990886A/ja
Publication of JPS4990886A publication Critical patent/JPS4990886A/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48001468A 1972-12-28 1972-12-28 Pending JPS4990886A (cs)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48001468A JPS4990886A (cs) 1972-12-28 1972-12-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48001468A JPS4990886A (cs) 1972-12-28 1972-12-28

Publications (1)

Publication Number Publication Date
JPS4990886A true JPS4990886A (cs) 1974-08-30

Family

ID=11502282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48001468A Pending JPS4990886A (cs) 1972-12-28 1972-12-28

Country Status (1)

Country Link
JP (1) JPS4990886A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126772A (en) * 1975-04-25 1976-11-05 Nippon Denso Co Ltd Electrolytic effect type semiconductor unit
JPS52119190A (en) * 1976-03-31 1977-10-06 Toshiba Corp Semiconductor integration circuit
JPS5980963A (ja) * 1983-08-24 1984-05-10 Hitachi Ltd Ｍｉｓ形半導体装置の製造法
JPS5980962A (ja) * 1983-08-24 1984-05-10 Hitachi Ltd Ｍｉｓ形半導体装置の製法
US6084436A (en) * 1996-10-24 2000-07-04 Nec Corporation Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (cs) * 1971-12-08 1973-09-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (cs) * 1971-12-08 1973-09-07

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126772A (en) * 1975-04-25 1976-11-05 Nippon Denso Co Ltd Electrolytic effect type semiconductor unit
JPS52119190A (en) * 1976-03-31 1977-10-06 Toshiba Corp Semiconductor integration circuit
JPS5980963A (ja) * 1983-08-24 1984-05-10 Hitachi Ltd Ｍｉｓ形半導体装置の製造法
JPS5980962A (ja) * 1983-08-24 1984-05-10 Hitachi Ltd Ｍｉｓ形半導体装置の製法
US6084436A (en) * 1996-10-24 2000-07-04 Nec Corporation Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance

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