JPS4988788A - - Google Patents

Info

Publication number
JPS4988788A
JPS4988788A JP12210872A JP12210872A JPS4988788A JP S4988788 A JPS4988788 A JP S4988788A JP 12210872 A JP12210872 A JP 12210872A JP 12210872 A JP12210872 A JP 12210872A JP S4988788 A JPS4988788 A JP S4988788A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12210872A
Other versions
JPS5529011B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12210872A priority Critical patent/JPS5529011B2/ja
Publication of JPS4988788A publication Critical patent/JPS4988788A/ja
Publication of JPS5529011B2 publication Critical patent/JPS5529011B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP12210872A 1972-12-07 1972-12-07 Expired JPS5529011B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12210872A JPS5529011B2 (ja) 1972-12-07 1972-12-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12210872A JPS5529011B2 (ja) 1972-12-07 1972-12-07

Publications (2)

Publication Number Publication Date
JPS4988788A true JPS4988788A (ja) 1974-08-24
JPS5529011B2 JPS5529011B2 (ja) 1980-07-31

Family

ID=14827825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12210872A Expired JPS5529011B2 (ja) 1972-12-07 1972-12-07

Country Status (1)

Country Link
JP (1) JPS5529011B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007145611A (ja) * 2005-11-24 2007-06-14 National Institute Of Advanced Industrial & Technology サファイア単結晶製造方法及びその製造装置
JP2008247706A (ja) * 2007-03-30 2008-10-16 Jfe Mineral Co Ltd コランダム単結晶の育成方法、コランダム単結晶およびコランダム単結晶ウェーハ
JP2016529193A (ja) * 2013-07-22 2016-09-23 ルビコン テクノロジー、インク． メルトから大型の酸化物結晶を製造する方法およびシステム

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02123132U (ja) * 1989-03-22 1990-10-09
US9546434B2 (en) * 2009-09-02 2017-01-17 Gtat Corporation High-temperature process improvements using helium under regulated pressure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2038690A1 (de) * 1969-09-12 1971-03-18 Carman Sapphire Corp Saphirgussstueck und Herstellungsverfahren

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2038690A1 (de) * 1969-09-12 1971-03-18 Carman Sapphire Corp Saphirgussstueck und Herstellungsverfahren

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007145611A (ja) * 2005-11-24 2007-06-14 National Institute Of Advanced Industrial & Technology サファイア単結晶製造方法及びその製造装置
JP2008247706A (ja) * 2007-03-30 2008-10-16 Jfe Mineral Co Ltd コランダム単結晶の育成方法、コランダム単結晶およびコランダム単結晶ウェーハ
JP2016529193A (ja) * 2013-07-22 2016-09-23 ルビコン テクノロジー、インク． メルトから大型の酸化物結晶を製造する方法およびシステム

Also Published As

Publication number Publication date
JPS5529011B2 (ja) 1980-07-31

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