JPS4979782A - - Google Patents

Info

Publication number
JPS4979782A
JPS4979782A JP12251772A JP12251772A JPS4979782A JP S4979782 A JPS4979782 A JP S4979782A JP 12251772 A JP12251772 A JP 12251772A JP 12251772 A JP12251772 A JP 12251772A JP S4979782 A JPS4979782 A JP S4979782A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12251772A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12251772A priority Critical patent/JPS4979782A/ja
Priority to DE19732361171 priority patent/DE2361171A1/de
Publication of JPS4979782A publication Critical patent/JPS4979782A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP12251772A 1972-12-08 1972-12-08 Pending JPS4979782A (he)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12251772A JPS4979782A (he) 1972-12-08 1972-12-08
DE19732361171 DE2361171A1 (de) 1972-12-08 1973-12-07 halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12251772A JPS4979782A (he) 1972-12-08 1972-12-08

Publications (1)

Publication Number Publication Date
JPS4979782A true JPS4979782A (he) 1974-08-01

Family

ID=14837798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12251772A Pending JPS4979782A (he) 1972-12-08 1972-12-08

Country Status (2)

Country Link
JP (1) JPS4979782A (he)
DE (1) DE2361171A1 (he)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
JPS59161864A (ja) * 1983-03-04 1984-09-12 Fujitsu Ltd 半導体装置
US4707720A (en) * 1984-11-29 1987-11-17 Kabushiki Kaisha Toshiba Semiconductor memory device
US6245648B1 (en) 1977-12-05 2001-06-12 Plasma Physics Corporation Method of forming semiconducting materials and barriers

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630355B2 (ja) * 1983-05-16 1994-04-20 ソニー株式会社 半導体装置
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245648B1 (en) 1977-12-05 2001-06-12 Plasma Physics Corporation Method of forming semiconducting materials and barriers
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
JPS59161864A (ja) * 1983-03-04 1984-09-12 Fujitsu Ltd 半導体装置
US4707720A (en) * 1984-11-29 1987-11-17 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
DE2361171A1 (de) 1974-06-27

Similar Documents

Publication Publication Date Title
CS171274B2 (he)
FR2202367B1 (he)
FR2203301A5 (he)
JPS5411848B2 (he)
JPS4947232A (he)
CS171746B2 (he)
JPS4979782A (he)
JPS4945186A (he)
JPS5338488B2 (he)
CS171369B1 (he)
CS168023B2 (he)
JPS4963833A (he)
JPS5413002Y2 (he)
JPS5028757B2 (he)
JPS4876648A (he)
JPS4982962U (he)
JPS5225806Y2 (he)
FR2195976A5 (he)
JPS5116843B2 (he)
CS165917B1 (he)
CS161385B1 (he)
CS152039B1 (he)
CS154093B1 (he)
CS154504B1 (he)
CS156012B1 (he)