JPS4972182A - - Google Patents

Info

Publication number
JPS4972182A
JPS4972182A JP48110084A JP11008473A JPS4972182A JP S4972182 A JPS4972182 A JP S4972182A JP 48110084 A JP48110084 A JP 48110084A JP 11008473 A JP11008473 A JP 11008473A JP S4972182 A JPS4972182 A JP S4972182A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48110084A
Other languages
Japanese (ja)
Other versions
JPS5336431B2 (no
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247710 external-priority patent/DE2247710C3/de
Application filed filed Critical
Publication of JPS4972182A publication Critical patent/JPS4972182A/ja
Publication of JPS5336431B2 publication Critical patent/JPS5336431B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11008473A 1972-09-28 1973-09-28 Expired JPS5336431B2 (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247710 DE2247710C3 (de) 1972-09-28 Flüssigphasen-Epitaxieverfahren und Vorrichtung zu dessen Durchführung

Publications (2)

Publication Number Publication Date
JPS4972182A true JPS4972182A (no) 1974-07-12
JPS5336431B2 JPS5336431B2 (no) 1978-10-03

Family

ID=5857691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11008473A Expired JPS5336431B2 (no) 1972-09-28 1973-09-28

Country Status (10)

Country Link
US (1) US3880680A (no)
JP (1) JPS5336431B2 (no)
AT (1) AT341579B (no)
BE (1) BE805406A (no)
CA (1) CA1004962A (no)
FR (1) FR2201131B1 (no)
GB (1) GB1433161A (no)
IT (1) IT995486B (no)
LU (1) LU68508A1 (no)
NL (1) NL7313421A (no)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (no) * 1973-11-20 1975-06-30
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US5585305A (en) * 1991-08-29 1996-12-17 Shin-Etsu Handotai Co. Ltd. Method for fabricating a semiconductor device
KR20010015636A (ko) * 1997-10-27 2001-02-26 에브게니 인비에비치 지바르기초프 원주형 구조를 가진 음극발광 스크린 및 그 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631836A (en) * 1969-08-06 1972-01-04 Motorola Inc Fixed gradient liquid epitaxy apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631836A (en) * 1969-08-06 1972-01-04 Motorola Inc Fixed gradient liquid epitaxy apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (no) * 1973-11-20 1975-06-30
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
JPS564517B2 (no) * 1976-03-24 1981-01-30
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method

Also Published As

Publication number Publication date
CA1004962A (en) 1977-02-08
JPS5336431B2 (no) 1978-10-03
LU68508A1 (no) 1974-04-02
FR2201131A1 (no) 1974-04-26
ATA692873A (de) 1977-06-15
DE2247710A1 (de) 1974-04-11
BE805406A (fr) 1974-03-27
AT341579B (de) 1978-02-10
US3880680A (en) 1975-04-29
GB1433161A (en) 1976-04-22
NL7313421A (no) 1974-04-01
DE2247710B2 (de) 1977-05-05
FR2201131B1 (no) 1977-03-11
IT995486B (it) 1975-11-10

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