JPS496879A - - Google Patents
Info
- Publication number
- JPS496879A JPS496879A JP4458272A JP4458272A JPS496879A JP S496879 A JPS496879 A JP S496879A JP 4458272 A JP4458272 A JP 4458272A JP 4458272 A JP4458272 A JP 4458272A JP S496879 A JPS496879 A JP S496879A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4458272A JPS496879A (fi) | 1972-05-08 | 1972-05-08 | |
| GB1414873A GB1423594A (en) | 1972-03-24 | 1973-03-23 | Manufacture of semiconductor single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4458272A JPS496879A (fi) | 1972-05-08 | 1972-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS496879A true JPS496879A (fi) | 1974-01-22 |
Family
ID=12695470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4458272A Pending JPS496879A (fi) | 1972-03-24 | 1972-05-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS496879A (fi) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119286U (ja) * | 1983-02-01 | 1984-08-11 | 松下電器産業株式会社 | 洗濯機用撹拌翼 |
| JPS61214422A (ja) * | 1985-03-20 | 1986-09-24 | Hoxan Corp | 半導体ウエハに多結晶シリコン層を形成する方法 |
-
1972
- 1972-05-08 JP JP4458272A patent/JPS496879A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119286U (ja) * | 1983-02-01 | 1984-08-11 | 松下電器産業株式会社 | 洗濯機用撹拌翼 |
| JPS6312862Y2 (fi) * | 1983-02-01 | 1988-04-12 | ||
| JPS61214422A (ja) * | 1985-03-20 | 1986-09-24 | Hoxan Corp | 半導体ウエハに多結晶シリコン層を形成する方法 |
| JPH0466098B2 (fi) * | 1985-03-20 | 1992-10-22 | Hokusan Kk |