JPS4960481A - - Google Patents

Info

Publication number
JPS4960481A
JPS4960481A JP47102204A JP10220472A JPS4960481A JP S4960481 A JPS4960481 A JP S4960481A JP 47102204 A JP47102204 A JP 47102204A JP 10220472 A JP10220472 A JP 10220472A JP S4960481 A JPS4960481 A JP S4960481A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47102204A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47102204A priority Critical patent/JPS4960481A/ja
Publication of JPS4960481A publication Critical patent/JPS4960481A/ja
Pending legal-status Critical Current

Links

JP47102204A 1972-10-12 1972-10-12 Pending JPS4960481A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47102204A JPS4960481A (de) 1972-10-12 1972-10-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47102204A JPS4960481A (de) 1972-10-12 1972-10-12

Publications (1)

Publication Number Publication Date
JPS4960481A true JPS4960481A (de) 1974-06-12

Family

ID=14321123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47102204A Pending JPS4960481A (de) 1972-10-12 1972-10-12

Country Status (1)

Country Link
JP (1) JPS4960481A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150737A (ja) * 2003-11-12 2005-06-09 Samsung Electronics Co Ltd 異種のゲート絶縁膜を有する半導体素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150737A (ja) * 2003-11-12 2005-06-09 Samsung Electronics Co Ltd 異種のゲート絶縁膜を有する半導体素子及びその製造方法

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