JPS4945035B1 - - Google Patents

Info

Publication number
JPS4945035B1
JPS4945035B1 JP8658670A JP8658670A JPS4945035B1 JP S4945035 B1 JPS4945035 B1 JP S4945035B1 JP 8658670 A JP8658670 A JP 8658670A JP 8658670 A JP8658670 A JP 8658670A JP S4945035 B1 JPS4945035 B1 JP S4945035B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8658670A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8658670A priority Critical patent/JPS4945035B1/ja
Priority to CA124253A priority patent/CA924026A/en
Priority to US00186257A priority patent/US3756877A/en
Priority to NLAANVRAGE7113629,A priority patent/NL169802C/xx
Priority to GB4625871A priority patent/GB1345752A/en
Priority to DE2149566A priority patent/DE2149566C3/de
Priority to FR7135864A priority patent/FR2110235B1/fr
Publication of JPS4945035B1 publication Critical patent/JPS4945035B1/ja
Pending legal-status Critical Current

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  • Element Separation (AREA)
  • Weting (AREA)
JP8658670A 1970-10-05 1970-10-05 Pending JPS4945035B1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8658670A JPS4945035B1 (de) 1970-10-05 1970-10-05
CA124253A CA924026A (en) 1970-10-05 1971-10-04 Method for manufacturing a semiconductor integrated circuit isolated by dielectric material
US00186257A US3756877A (en) 1970-10-05 1971-10-04 By dielectric material method for manufacturing a semiconductor integrated circuit isolated
NLAANVRAGE7113629,A NL169802C (nl) 1970-10-05 1971-10-05 Werkwijze voor het vervaardigen van een door dielektrisch materiaal geisoleerde, geintegreerde halfgeleiderschakeling.
GB4625871A GB1345752A (en) 1970-10-05 1971-10-05 Method for manufacturing a semiconductor integrated circuit isolated by dielectric material
DE2149566A DE2149566C3 (de) 1970-10-05 1971-10-05 Verfahren zur Herstellung einer integrierten Halbleiterschaltung, deren Schaltungselement durch dielektrisches Material voneinander isoliert sind
FR7135864A FR2110235B1 (de) 1970-10-05 1971-10-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8658670A JPS4945035B1 (de) 1970-10-05 1970-10-05

Publications (1)

Publication Number Publication Date
JPS4945035B1 true JPS4945035B1 (de) 1974-12-02

Family

ID=13891100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8658670A Pending JPS4945035B1 (de) 1970-10-05 1970-10-05

Country Status (1)

Country Link
JP (1) JPS4945035B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030764A (ja) * 2011-06-21 2013-02-07 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030764A (ja) * 2011-06-21 2013-02-07 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

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